RW

Richard Q. Williams

IBM: 72 patents #999 of 70,183Top 2%
Globalfoundries: 2 patents #1,397 of 4,424Top 35%
GU Globalfoundries U.S.: 1 patents #22 of 211Top 15%
Overall (All Time): #25,746 of 4,157,543Top 1%
75
Patents All Time

Issued Patents All Time

Showing 25 most recent of 75 patents

Patent #TitleCo-InventorsDate
10546936 Structure for reduced source and drain contact to gate stack capacitance Carl Radens 2020-01-28
10439046 Structure and method for improving access resistance in U-channel ETSOI Robert H. Dennard, Rajiv V. Joshi 2019-10-08
10374046 Structure for reduced source and drain contact to gate stack capacitance Carl Radens 2019-08-06
10269905 Structure for reduced source and drain contact to gate stack capacitance Carl Radens 2019-04-23
9825172 Field effect transistor structure and method of forming same Edward J. Nowak 2017-11-21
9755030 Method for reduced source and drain contact to gate stack capacitance Carl Radens 2017-09-05
9646124 Modeling transistor performance considering non-uniform local layout effects Dureseti Chidambarrao 2017-05-09
9601570 Structure for reduced source and drain contact to gate stack capacitance Carl Radens 2017-03-21
9373678 Non-planar capacitors with finely tuned capacitance values and methods of forming the non-planar capacitors Edward J. Nowak 2016-06-21
9178012 Plated trench capacitor structures Veeraraghavan S. Basker 2015-11-03
9059203 Semiconductor-on-insulator (SOI) structure with selectivity placed sub-insulator layer void(s) and method of forming the SOI structure Toshiharu Furukawa, Robert R. Robison 2015-06-16
9058441 Methods for modeling of FinFET width quantization Wilfried Ernest-August Haensch, Chung-Hsun Lin, Philip J. Oldiges, Hailing Wang 2015-06-16
8835261 Field effect transistor structure and method of forming same Edward J. Nowak 2014-09-16
8806419 Apparatus for modeling of FinFET width quantization Wilfried Ernest-August Haensch, Chung-Hsun Lin, Philip J. Oldiges, Hailing Wang 2014-08-12
8799848 Methods for modeling of FinFET width quantization Wilfried Ernest-August Haensch, Chung-Hsun Lin, Philip J. Oldiges, Hailing Wang 2014-08-05
8745571 Analysis of compensated layout shapes Hongmei Li 2014-06-03
8703572 Embeded DRAM cell structures with high conductance electrodes and methods of manufacture Veeraraghavan S. Basker 2014-04-22
8610211 Semiconductor-on-insulator (SOI) structure with selectively placed sub-insulator layer void(s) and method of forming the SOI structure Toshiharu Furukawa, Robert R. Robison 2013-12-17
8453100 Circuit analysis using transverse buckets Dureseti Chidambarrao 2013-05-28
8417503 System and method for target-based compact modeling Kerry Bernstein, Josef S. Watts 2013-04-09
8392867 System, method and program storage device for developing condensed netlists representative of groups of active devices in an integrated circuit and for modeling the performance of the integrated circuit based on the condensed netlists Yanqing Deng, Paul A. Hyde, James M. Johnson, Todd G. McKenzie, Scott K. Springer 2013-03-05
8211741 Carbon nanotube based integrated semiconductor circuit Joerg Appenzeller, AJ KleinOsowski, Edward J. Nowak 2012-07-03
8119474 High performance capacitors in planar back gates CMOS Andres Bryant, Edward J. Nowak 2012-02-21
8112729 Method and system for selective stress enablement in simulation modeling William R. Tonti 2012-02-07
8037433 System and methodology for determining layout-dependent effects in ULSI simulation Dureseti Chidambarrao, Tong Li, David W. Winston 2011-10-11