PC

PR Chidambaram

TI Texas Instruments: 15 patents #889 of 12,488Top 8%
QU Qualcomm: 11 patents #1,871 of 12,104Top 20%
Overall (All Time): #155,100 of 4,157,543Top 4%
26
Patents All Time

Issued Patents All Time

Showing 25 most recent of 26 patents

Patent #TitleCo-InventorsDate
9496254 Capacitor using middle of line (MOL) conductive layers Bin Yang 2016-11-15
9461040 System and method of varying gate lengths of multiple cores Ming Cai, Samit Sengupta, Chock Hing Gan 2016-10-04
9412818 System and method of manufacturing a fin field-effect transistor having multiple fin heights Bin Yang, Xia Li, Choh Fei Yeap 2016-08-09
9269492 Bone frame, low resistance via coupled metal oxide-metal (MOM) orthogonal finger capacitor John Jianhong Zhu, Lixin Ge, Bin Yang, Jihong Choi 2016-02-23
9263522 Transistor with a diffusion barrier Bin Yang, Xia Li 2016-02-16
9252104 Complementary back end of line (BEOL) capacitor John Jianhong Zhu, Bin Yang, Lixin Ge, Jihong Choi 2016-02-02
9236483 FinFET with backgate, without punchthrough, and with reduced fin height variation Bin Yang, Xia Li, Choh Fei Yeap 2016-01-12
9076775 System and method of varying gate lengths of multiple cores Ming Cai, Samit Sengupta, Chock Hing Gan 2015-07-07
9024418 Local interconnect structures for high density John Jianhong Zhu, Giridhar Nallapati 2015-05-05
9012966 Capacitor using middle of line (MOL) conductive layers Bin Yang 2015-04-21
8610176 Standard cell architecture using double poly patterning for multi VT devices Prayag Bhanubhai Patel, Pratyush Kamal, Foua Vang, Chock Hing Gan, Chethan Swamynathan 2013-12-17
7670892 Nitrogen based implants for defect reduction in strained silicon Srinivasan Chakravarthi, Rajesh Khamankar, Haowen Bu, Douglas T. Grider 2010-03-02
7560324 Drain extended MOS transistors and methods for making the same 2009-07-14
7339215 Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel 2008-03-04
7244654 Drive current improvement from recessed SiGe incorporation close to gate Douglas T. Grider, Brian Smith, Haowen Bu, Lindsey Hall 2007-07-17
7217626 Transistor fabrication methods using dual sidewall spacers Haowen Bu, Rajesh Khamankar, Lindsey Hall 2007-05-15
7208362 Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel 2007-04-24
7122435 Methods, systems and structures for forming improved transistors Haowen Bu 2006-10-17
7118977 System and method for improved dopant profiles in CMOS transistors Srinivasan Chakravarthi 2006-10-10
7101751 Versatile system for limiting electric field degradation of semiconductor structures Greg Baldwin 2006-09-05
7061058 Forming a retrograde well in a transistor to enhance performance of the transistor Srinivasan Chakravarthi, Robert C. Bowen, Haowen Bu 2006-06-13
7060579 Increased drive current by isotropic recess etch Lindsey Hall, Haowen Bu 2006-06-13
7012028 Transistor fabrication methods using reduced width sidewall spacers Haowen Bu, Rajesh Khamankar 2006-03-14
6927137 Forming a retrograde well in a transistor to enhance performance of the transistor Srinivasan Chakravarthi, Robert C. Bowen, Haowen Bu 2005-08-09
6818518 Method for producing low/high voltage threshold transistors in semiconductor processing 2004-11-16