CG

Chock Hing Gan

CM Chartered Semiconductor Manufacturing: 7 patents #90 of 840Top 15%
QU Qualcomm: 7 patents #2,597 of 12,104Top 25%
Overall (All Time): #350,566 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9461040 System and method of varying gate lengths of multiple cores Ming Cai, Samit Sengupta, PR Chidambaram 2016-10-04
9245971 Semiconductor device having high mobility channel Bin Yang, P R Chidambaram, John Jianhong Zhu, Jihong Choi, Da Yang +4 more 2016-01-26
9076775 System and method of varying gate lengths of multiple cores Ming Cai, Samit Sengupta, PR Chidambaram 2015-07-07
9070551 Method and apparatus for a diffusion bridged cell library Benjamin J. Bowers, James W. Hayward, Charanya Gopal, Gregory Christopher Burda, Robert J. Bucki +3 more 2015-06-30
8782576 Method and apparatus for a diffusion bridged cell library Benjamin J. Bowers, James W. Hayward, Charanya Gopal, Gregory Christopher Burda, Robert J. Bucki +3 more 2014-07-15
8610176 Standard cell architecture using double poly patterning for multi VT devices Prayag Bhanubhai Patel, Pratyush Kamal, Foua Vang, PR Chidambaram, Chethan Swamynathan 2013-12-17
8558320 Systems and methods employing a physically asymmetric semiconductor device having symmetrical electrical behavior Haining Yang, Zhongze Wang, Beom-Mo Han 2013-10-15
6531380 Method of fabricating T-shaped recessed polysilicon gate transistors Xia Li 2003-03-11
6475916 Method of patterning gate electrode with ultra-thin gate dielectric James Yong Meng Lee, Yun Zhang, Ravi Sundaresan 2002-11-05
6309933 Method of fabricating T-shaped recessed polysilicon gate transistors Xia Li 2001-10-30
6303458 Alignment mark scheme for Sti process to save one mask step Yunqiang Zhang, Gang Qian 2001-10-16
6165869 Method to avoid dishing in forming trenches for shallow trench isolation Gang Qian, Lap Chan, Poh Suan Tan 2000-12-26
6027982 Method to form shallow trench isolation structures with improved isolation fill and surface planarity Igor Peidous, Vladislav Vassiliev, Guang Ping Hua 2000-02-22
5856225 Creation of a self-aligned, ion implanted channel region, after source and drain formation Teck Koon Lee, Lap Chan, Po-Ching Liu 1999-01-05