RB

Robert C. Bowen

Samsung: 21 patents #6,266 of 75,807Top 9%
TI Texas Instruments: 8 patents #1,843 of 12,488Top 15%
Overall (All Time): #131,356 of 4,157,543Top 4%
29
Patents All Time

Issued Patents All Time

Showing 25 most recent of 29 patents

Patent #TitleCo-InventorsDate
10283638 Structure and method to achieve large strain in NS without addition of stack-generated defects Jorge A. Kittl, Ganesh Hegde, Mark S. Rodder 2019-05-07
10170549 Strained stacked nanosheet FETs and/or quantum well stacked nanosheet Jorge A. Kittl, Borna J. Obradovic, Mark S. Rodder 2019-01-01
10147793 FinFET devices including recessed source/drain regions having optimized depths Borna J. Obradovic, Mark S. Rodder, Jorge A. Kittl, Ryan M. Hatcher 2018-12-04
9917158 Device contact structures including heterojunctions for low contact resistance Jorge A. Kittl, Borna J. Obradovic, Mark S. Rodder 2018-03-13
9831323 Structure and method to achieve compressively strained Si NS Jorge A. Kittl, Ganesh Hegde, Borna J. Obradovic, Mark S. Rodder 2017-11-28
9793403 Multi-layer fin field effect transistor devices and methods of forming the same Borna J. Obradovic, Titash Rakshit, Wei-E Wang, Mark S. Rodder 2017-10-17
9716176 FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same Mark S. Rodder, Borna J. Obradovic 2017-07-25
9711414 Strained stacked nanosheet FETS and/or quantum well stacked nanosheet Ryan M. Hatcher, Mark S. Rodder, Borna J. Obradovic, Joon Goo Hong 2017-07-18
9685509 Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions Jorge A. Kittl, Mark S. Rodder 2017-06-20
9647098 Thermionically-overdriven tunnel FETs and methods of fabricating the same Borna J. Obradovic, Dharmendar Reddy Palle, Mark S. Rodder 2017-05-09
9613907 Low resistivity damascene interconnect Ganesh Hegde, Mark S. Rodder, Jorge A. Kittl 2017-04-04
9583590 Integrated circuit devices including FinFETs and methods of forming the same Borna J. Obradovic, Mark S. Rodder 2017-02-28
9570609 Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same Borna J. Obradovic, Mark S. Rodder 2017-02-14
9525053 Integrated circuit devices including strained channel regions and methods of forming the same Ryan M. Hatcher, Mark S. Rodder, Jorge A. Kittl 2016-12-20
9461114 Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same Borna J. Obradovic, Ryan M. Hatcher, Mark S. Rodder 2016-10-04
9431529 Confined semi-metal field effect transistor Ryan M. Hatcher, Jorge A. Kittl 2016-08-30
9287357 Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same Mark S. Rodder, Borna J. Obradovic, Rwik Sengupta, Dharmendar Reddy Palle 2016-03-15
9236444 Methods of fabricating quantum well field effect transistors having multiple delta doped layers Mark S. Rodder 2016-01-12
9178045 Integrated circuit devices including FinFETS and methods of forming the same Borna J. Obradovic, Mark S. Rodder 2015-11-03
9112130 Quantum interference based logic devices including electron monochromator Borna J. Obradovic 2015-08-18
9064699 Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods Wei-E Wang, Mark S. Rodder 2015-06-23
9000505 Quantum electro-optical device using CMOS transistor with reverse polarity drain implant Henry Litzmann Edwards, Tathagata Chatterjee 2015-04-07
8362462 Gated resonant tunneling diode Henry Litzmann Edwards, Tathagata Chatterjee 2013-01-29
7943450 Gated resonant tunneling diode Henry Litzmann Edwards, Tathagata Chatterjee 2011-05-17
7910918 Gated resonant tunneling diode Henry Litzmann Edwards, Tathagata Chatterjee 2011-03-22