Issued Patents All Time
Showing 25 most recent of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12285601 | Ex vivo method of manufacturing a wire structure electrode | Manfred Franke, Shaher Ahmad, Stephan NIEUWOUDT, Amelia HOWE, Aniruddha A. Upadhye +3 more | 2025-04-29 |
| RE50174 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more | 2024-10-15 |
| 11282186 | Anomaly detection using image-based physical characterization | Dechao Guo, Liying Jiang, Jingyun Zhang, Huimei Zhou | 2022-03-22 |
| 11195969 | Method of forming a metal silicide transparent conductive electrode | Jeffrey P. Gambino, Daniel S. Vanslette | 2021-12-07 |
| 11056610 | Method of forming a metal silicide transparent conductive electrode | Jeffrey P. Gambino, Daniel S. Vanslette | 2021-07-06 |
| 10664966 | Anomaly detection using image-based physical characterization | Dechao Guo, Liying Jiang, Jingyun Zhang, Huimei Zhou | 2020-05-26 |
| 10615278 | Preventing strained fin relaxation | Kangguo Cheng, Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve +3 more | 2020-04-07 |
| 10263098 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Huimei Zhou | 2019-04-16 |
| 10224419 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Huimei Zhou | 2019-03-05 |
| 10170593 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Huimei Zhou | 2019-01-01 |
| 10170477 | Forming MOSFET structures with work function modification | Ruqiang Bao, Gauri Karve, Robert R. Robison, Gen Tsutsui, Reinaldo Vega +1 more | 2019-01-01 |
| 10147725 | Forming MOSFET structures with work function modification | Ruqiang Bao, Gauri Karve, Robert R. Robison, Gen Tsutsui, Reinaldo Vega +1 more | 2018-12-04 |
| 10147839 | Method of forming a metal silicide transparent conductive electrode | Jeffrey P. Gambino, Daniel S. Vanslette | 2018-12-04 |
| 10121852 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more | 2018-11-06 |
| 10121853 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more | 2018-11-06 |
| 9922983 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Huimei Zhou | 2018-03-20 |
| 9922984 | Threshold voltage modulation through channel length adjustment | Ruqiang Bao, Dechao Guo, Huimei Zhou | 2018-03-20 |
| 9881937 | Preventing strained fin relaxation | Kangguo Cheng, Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve +3 more | 2018-01-30 |
| 9876074 | Structure and process to tuck fin tips self-aligned to gates | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie +2 more | 2018-01-23 |
| 9576979 | Preventing strained fin relaxation by sealing fin ends | Kangguo Cheng, Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Gauri Karve +3 more | 2017-02-21 |
| 9312426 | Structure with a metal silicide transparent conductive electrode and a method of forming the structure | Jeffrey P. Gambino, Daniel S. Vanslette | 2016-04-12 |
| 9293221 | Three terminal fuse with FinFET | Chun-Chen Yeh | 2016-03-22 |
| 9287000 | Three terminal fuse with FinFET | Chun-Chen Yeh | 2016-03-15 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Kangguo Cheng, Eric C. Harley, Judson R. Holt, Gauri Karve, Yue Ke +4 more | 2016-03-15 |
| 8871549 | Biological and chemical sensors | John J. Ellis-Monaghan, Jeffrey P. Gambino | 2014-10-28 |