Issued Patents All Time
Showing 151–175 of 191 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7323423 | Forming high-k dielectric layers on smooth substrates | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Uday Shah +2 more | 2008-01-29 |
| 7317231 | Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrode | Matthew V. Metz, Mark L. Doczy, Jack T. Kavalieros, Justin K. Brask, Robert S. Chau | 2008-01-08 |
| 7279375 | Block contact architectures for nanoscale channel transistors | Marko Radosavljevic, Amlan Majumdar, Brian S. Doyle, Jack T. Kavalieros, Mark L. Doczy +3 more | 2007-10-09 |
| 7268058 | Tri-gate transistors and methods to fabricate same | Robert S. Chau, Brian S. Doyle, Been-Yih Jin | 2007-09-11 |
| 7241653 | Nonplanar device with stress incorporation layer and method of fabrication | Scott A. Hareland, Robert S. Chau, Brian S. Doyle, Been-Yih Jin | 2007-07-10 |
| 7235809 | Semiconductor channel on insulator structure | Been-Yih Jin, Brian S. Doyle, Scott A. Hareland, Mark L. Doczy, Matthew V. Metz +3 more | 2007-06-26 |
| 7223679 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2007-05-29 |
| 7220635 | Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Uday Shah, Matthew V. Metz +3 more | 2007-05-22 |
| 7192856 | Forming dual metal complementary metal oxide semiconductor integrated circuits | Mark L. Doczy, Lawrence Wong, Valery M. Dubin, Justin K. Brask, Jack T. Kavalieros +2 more | 2007-03-20 |
| 7193279 | Non-planar MOS structure with a strained channel region | Brian S. Doyle, Been-Yih Jin, Robert S. Chau | 2007-03-20 |
| 7192890 | Depositing an oxide | Ying Zhou, Matthew V. Metz, Justin K. Brask, John Burghard, Markus Kuhn +1 more | 2007-03-20 |
| 7176090 | Method for making a semiconductor device that includes a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Uday Shah +2 more | 2007-02-13 |
| 7170120 | Carbon nanotube energy well (CNEW) field effect transistor | Marko Radosavljevic, Brian S. Doyle, Jack T. Kavalieros, Justin K. Brask, Amlan Majumdar +1 more | 2007-01-30 |
| 7160779 | Method for making a semiconductor device having a high-k gate dielectric | Mark L. Doczy, Jack T. Kavalieros, Justin K. Brask, Matthew V. Metz, Brian S. Doyle +1 more | 2007-01-09 |
| 7157378 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Chris Barns, Mark L. Doczy, Uday Shah, Jack T. Kavalieros +3 more | 2007-01-02 |
| 7153784 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Uday Shah, Chris Barns +3 more | 2006-12-26 |
| 7153734 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Chris Barns +3 more | 2006-12-26 |
| 7148548 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Justin K. Brask, Robert S. Chau | 2006-12-12 |
| 7148099 | Reducing the dielectric constant of a portion of a gate dielectric | Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask, Robert S. Chau | 2006-12-12 |
| 7144783 | Reducing gate dielectric material to form a metal gate electrode extension | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Robert S. Chau | 2006-12-05 |
| 7138305 | Method and apparatus for improving stability of a 6T CMOS SRAM cell | Brian S. Doyle, Robert S. Chau, Jack T. Kavalieros, Bo Zheng, Scott A. Hareland | 2006-11-21 |
| 7138316 | Semiconductor channel on insulator structure | Been-Yih Jin, Brian S. Doyle, Scott A. Hareland, Mark L. Doczy, Matthew V. Metz +3 more | 2006-11-21 |
| 7138323 | Planarizing a semiconductor structure to form replacement metal gates | Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Uday Shah, Chris Barns +2 more | 2006-11-21 |
| 7125762 | Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer | Justin K. Brask, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Uday Shah +1 more | 2006-10-24 |
| 7126199 | Multilayer metal gate electrode | Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Chris Barns, Matthew V. Metz +1 more | 2006-10-24 |