Issued Patents All Time
Showing 101–125 of 206 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7709909 | Method for making a semiconductor device having a high-k gate dielectric | Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin K. Brask, Jack T. Kavalieros +4 more | 2010-05-04 |
| 7704833 | Method of forming abrupt source drain metal gate transistors | Nick Lindert, Suman Datta, Jack T. Kavalieros, Matthew V. Metz, Justin K. Brask +3 more | 2010-04-27 |
| 7682891 | Tunable gate electrode work function material for transistor applications | Adrien LaVoie, Valery M. Dubin, John J. Plombon, Juan E. Dominguez, Harsono S. Simka +1 more | 2010-03-23 |
| 7671471 | Method for making a semiconductor device having a high-k dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Chris Barns, Matthew V. Metz +3 more | 2010-03-02 |
| 7666727 | Semiconductor device having a laterally modulated gate workfunction and method of fabrication | Brian S. Doyle, Scott A. Hareland, Robert S. Chau | 2010-02-23 |
| 7615441 | Forming high-k dielectric layers on smooth substrates | Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz, Suman Datta, Uday Shah +2 more | 2009-11-10 |
| 7575991 | Removing a high-k gate dielectric | Robert Norman, Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz, Suman Datta +1 more | 2009-08-18 |
| 7569443 | Complementary metal oxide semiconductor integrated circuit using raised source drain and replacement metal gate | Jack T. Kavalieros, Annalisa Cappellani, Justin K. Brask, Matthew V. Metz, Suman Datta +2 more | 2009-08-04 |
| 7531437 | Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric material | Justin K. Brask, Brian S. Doyle, Jack T. Kavalieros, Uday Shah, Robert S. Chau | 2009-05-12 |
| 7528025 | Nonplanar transistors with metal gate electrodes | Justin K. Brask, Brian Dovle, Jack Kavalleros, Uday Shah, Robert S. Chau | 2009-05-05 |
| 7524727 | Gate electrode having a capping layer | Gilbert Dewey, Suman Datta, Justin K. Brask, Matthew V. Metz | 2009-04-28 |
| 7518196 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Matthew V. Metz | 2009-04-14 |
| 7501336 | Metal gate device with reduced oxidation of a high-k gate dielectric | Brian S. Doyle, Jack T. Kavalieros, Justin K. Brask, Matthew V. Mertz, Suman Datta +1 more | 2009-03-10 |
| 7485503 | Dielectric interface for group III-V semiconductor device | Justin K. Brask, Suman Datta, James M. Blackwell, Matthew V. Metz, Jack T. Kavalieros +1 more | 2009-02-03 |
| 7479421 | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby | Jack T. Kavalieros, Justin K. Brask, Brian S. Doyle, Uday Shah, Suman Datta +2 more | 2009-01-20 |
| 7470972 | Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress | Jack T. Kavalieros, Justin K. Brask, Matthew V. Metz, Suman Datta, Brian S. Doyle +7 more | 2008-12-30 |
| 7449756 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Matthew V. Metz, Suman Datta, Justin K. Brask, Jack T. Kavalieros, Robert S. Chau | 2008-11-11 |
| 7442983 | Method for making a semiconductor device having a high-k gate dielectric | Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin K. Brask, Jack T. Kavalieros +4 more | 2008-10-28 |
| 7439571 | Method for fabricating metal gate structures | Mark Liu, Jack T. Kavalieros, Justin K. Brask, Matthew V. Metz, Robert S. Chau | 2008-10-21 |
| 7439113 | Forming dual metal complementary metal oxide semiconductor integrated circuits | Mitchell Taylor, Justin K. Brask, Jack T. Kavalieros, Suman Datta, Matthew V. Metz +2 more | 2008-10-21 |
| 7429747 | Sb-based CMOS devices | Mantu K. Hudait, Suman Datta, Jack T. Kavalieros, Robert S. Chau | 2008-09-30 |
| 7425490 | Reducing reactions between polysilicon gate electrodes and high dielectric constant gate dielectrics | Jack T. Kavalieros, Justin K. Brask, Uday Shah, Matthew V. Metz, Suman Datta +1 more | 2008-09-16 |
| 7425500 | Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors | Matthew V. Metz, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Robert S. Chau | 2008-09-16 |
| 7422936 | Facilitating removal of sacrificial layers via implantation to form replacement metal gates | Chris Barns, Matt Prince, Justin K. Brask, Jack T. Kavalieros | 2008-09-09 |
| 7420254 | Semiconductor device having a metal gate electrode | Robert S. Chau, Markus Kuhn | 2008-09-02 |