Issued Patents All Time
Showing 151–175 of 206 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7183184 | Method for making a semiconductor device that includes a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Chris Barns, Robert S. Chau | 2007-02-27 |
| 7176090 | Method for making a semiconductor device that includes a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz, Suman Datta, Uday Shah +2 more | 2007-02-13 |
| 7166505 | Method for making a semiconductor device having a high-k gate dielectric | Robert S. Chau, Reza Arghavani | 2007-01-23 |
| 7160779 | Method for making a semiconductor device having a high-k gate dielectric | Jack T. Kavalieros, Justin K. Brask, Matthew V. Metz, Suman Datta, Brian S. Doyle +1 more | 2007-01-09 |
| 7160767 | Method for making a semiconductor device that includes a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Matthew V. Metz, Robert S. Chau | 2007-01-09 |
| 7157378 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Chris Barns, Uday Shah, Jack T. Kavalieros, Matthew V. Metz +3 more | 2007-01-02 |
| 7153734 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz, Chris Barns, Uday Shah +3 more | 2006-12-26 |
| 7153784 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Chris Barns, Matthew V. Metz +3 more | 2006-12-26 |
| 7148548 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Jack T. Kavalieros, Matthew V. Metz, Justin K. Brask, Suman Datta, Robert S. Chau | 2006-12-12 |
| 7148099 | Reducing the dielectric constant of a portion of a gate dielectric | Suman Datta, Jack T. Kavalieros, Matthew V. Metz, Justin K. Brask, Robert S. Chau | 2006-12-12 |
| 7144783 | Reducing gate dielectric material to form a metal gate electrode extension | Suman Datta, Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz, Robert S. Chau | 2006-12-05 |
| 7144816 | Polysilicon opening polish | Chris Barns | 2006-12-05 |
| 7138316 | Semiconductor channel on insulator structure | Been-Yih Jin, Brian S. Doyle, Scott A. Hareland, Matthew V. Metz, Boyan Boyanov +3 more | 2006-11-21 |
| 7138323 | Planarizing a semiconductor structure to form replacement metal gates | Jack T. Kavalieros, Justin K. Brask, Uday Shah, Chris Barns, Matthew V. Metz +2 more | 2006-11-21 |
| 7129182 | Method for etching a thin metal layer | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Matthew V. Metz, Robert S. Chau +1 more | 2006-10-31 |
| 7125762 | Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer | Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz, Suman Datta, Uday Shah +1 more | 2006-10-24 |
| 7126199 | Multilayer metal gate electrode | Justin K. Brask, Jack T. Kavalieros, Chris Barns, Matthew V. Metz, Suman Datta +1 more | 2006-10-24 |
| 7122870 | Methods of forming a multilayer stack alloy for work function engineering | John Barnak, Collin Borla, Markus Kuhn, Jacob Jensen | 2006-10-17 |
| 7105390 | Nonplanar transistors with metal gate electrodes | Justin K. Brask, Brian S. Doyle, Robert S. Chau | 2006-09-12 |
| 7087476 | Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit | Matthew V. Metz, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Robert S. Chau | 2006-08-08 |
| 7084038 | Method for making a semiconductor device having a high-k gate dielectric | Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin K. Brask, Jack T. Kavalieros +4 more | 2006-08-01 |
| 7078750 | Method of fabricating a robust gate dielectric using a replacement gate flow | Scott A. Hareland, Robert S. Chau | 2006-07-18 |
| 7074680 | Method for making a semiconductor device having a high-k gate dielectric | Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin K. Brask, Jack T. Kavalieros +4 more | 2006-07-11 |
| 7064066 | Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode | Matthew V. Metz, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Robert S. Chau | 2006-06-20 |
| 7060568 | Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit | Matthew V. Metz, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Robert S. Chau | 2006-06-13 |