Issued Patents All Time
Showing 226–250 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9461141 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more | 2016-10-04 |
| 9397188 | Group III-N nanowire transistors | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-07-19 |
| 9391181 | Lattice mismatched hetero-epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2016-07-12 |
| 9373693 | Nonplanar III-N transistors with compositionally graded semiconductor channels | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more | 2016-06-21 |
| 9362369 | Group III-N transistors on nanoscale template structures | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2016-06-07 |
| 9337291 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2016-05-10 |
| 9245989 | High voltage field effect transistors | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-01-26 |
| 9240410 | Group III-N nanowire transistors | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-01-19 |
| 9236476 | Techniques and configuration for stacking transistors of an integrated circuit device | Ravi Pillarisetty, Charles C. Kuo, Gilbert Dewey, Willy Rachmady, Van H. Le +3 more | 2016-01-12 |
| 9219079 | Group III-N transistor on nanoscale template structures | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2015-12-22 |
| 9209290 | III-N material structure for gate-recessed transistors | Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more | 2015-12-08 |
| 9136343 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2015-09-15 |
| 9123790 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more | 2015-09-01 |
| 9099490 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Marko Radosavljevic, Niloy Mukherjee, Niti Goel, Sanaz Kabehie +3 more | 2015-08-04 |
| 9064709 | High breakdown voltage III-N depletion mode MOS capacitors | Sansaptak Dasgupta, Gerhard Schrom, Valluri Rao, Robert S. Chau | 2015-06-23 |
| 9029835 | Epitaxial film on nanoscale structure | Benjamin Chu-King, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2015-05-12 |
| 8987091 | III-N material structure for gate-recessed transistors | Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more | 2015-03-24 |
| 8954021 | Group III-N transistors on nanoscale template structures | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2015-02-10 |
| 8896101 | Nonplanar III-N transistors with compositionally graded semiconductor channels | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more | 2014-11-25 |
| 8890264 | Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface | Gilbert Dewey, Robert S. Chau, Marko Radosavljevic, Scott B. Clendenning, Ravi Pillarisetty | 2014-11-18 |
| 8872225 | Defect transferred and lattice mismatched epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2014-10-28 |
| 8842706 | Opto-electronic oscillator and method | Milton Feng, Nick Holonyak, Jr., Mark E. Stuenkel, Fei Tan | 2014-09-23 |
| 8785909 | Non-planar semiconductor device having channel region with low band-gap cladding layer | Marko Radosavljevic, Gilbert Dewey, Benjamin Chu-Kung, Dipanjan Basu, Sanaz K. Gardner +4 more | 2014-07-22 |
| 8768271 | Group III-N transistors on nanoscale template structures | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2014-07-01 |
| 8765563 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2014-07-01 |