Issued Patents All Time
Showing 201–225 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853107 | Selective epitaxially grown III-V materials based devices | Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung +3 more | 2017-12-26 |
| 9847448 | Forming LED structures on silicon fins | Sansaptak Dasgupta, Robert S. Chau, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner | 2017-12-19 |
| 9847432 | Forming III-V device structures on (111) planes of silicon fins | Sansaptak Dasgupta, Sanaz K. Gardner, Benjamin Chu-Kung, Marko Radosavljevic, Seung Hoon Sung +1 more | 2017-12-19 |
| 9837499 | Self-aligned gate last III-N transistors | Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner, Marko RADOSAVLIJEVIC, Robert S. Chau | 2017-12-05 |
| 9818847 | Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface | Gilbert Dewey, Robert S. Chau, Marko Radosavljevic, Scott B. Clendenning, Ravi Pillarisetty | 2017-11-14 |
| 9812574 | Techniques and configurations for stacking transistors of an integrated circuit device | Ravi Pillarisetty, Charles C. Kuo, Gilbert Dewey, Willy Rachmady, Van H. Le +3 more | 2017-11-07 |
| 9806203 | Nonplanar III-N transistors with compositionally graded semiconductor channels | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more | 2017-10-31 |
| 9755062 | III-N material structure for gate-recessed transistors | Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more | 2017-09-05 |
| 9748371 | Transition metal dichalcogenide semiconductor assemblies | Marko Radosavljevic, Brian S. Doyle, Ravi Pillarisetty, Niloy Mukherjee, Sansaptak Dasgupta +1 more | 2017-08-29 |
| 9716149 | Group III-N transistors on nanoscale template structures | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2017-07-25 |
| 9698222 | Method of fabricating semiconductor structures on dissimilar substrates | Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more | 2017-07-04 |
| 9691857 | Group III-N nanowire transistors | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2017-06-27 |
| 9685508 | High voltage field effect transistors | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2017-06-20 |
| 9673045 | Integration of III-V devices on Si wafers | Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +1 more | 2017-06-06 |
| 9666708 | III-N transistors with enhanced breakdown voltage | Benjamin Chu-Kung, Sansaptak Dasgupta, Robert S. Chau, Seung Hoon Sung, Ravi Pillarisetty +1 more | 2017-05-30 |
| 9660067 | III-N transistors with epitaxial layers providing steep subthreshold swing | Sansaptak Dasgupta, Marko Radosavljevic, Robert S. Chau | 2017-05-23 |
| 9660064 | Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack | Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2017-05-23 |
| 9660085 | Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof | Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2017-05-23 |
| 9640422 | III-N devices in Si trenches | Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more | 2017-05-02 |
| 9640671 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2017-05-02 |
| 9634007 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2017-04-25 |
| 9590069 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Marko Radosavljevic, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more | 2017-03-07 |
| 9583574 | Epitaxial buffer layers for group III-N transistors on silicon substrates | Sansaptak Dasgupta, Niloy Mukherjee, Marko Radosavljevic, Robert S. Chau | 2017-02-28 |
| 9530878 | III-N material structure for gate-recessed transistors | Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more | 2016-12-27 |
| 9461160 | Non-planar III-N transistor | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2016-10-04 |