Issued Patents All Time
Showing 176–200 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10347544 | Co-planar p-channel and n-channel gallium nitride-based transistors on silicon and techniques for forming same | Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung | 2019-07-09 |
| 10332998 | Transistors with heteroepitaxial III-N source/drain | Sansaptak Dasgupta, Marko Radosavljevic | 2019-06-25 |
| 10325774 | Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices | Sansaptak Dasgupta, Benjamin Chu-Kung, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +2 more | 2019-06-18 |
| 10290614 | Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits | Robert S. Chau, Valluri Rao, Niloy Mukherjee, Marko Radosavljevic, Ravi Pillarisetty +2 more | 2019-05-14 |
| 10263074 | High voltage field effect transistors | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2019-04-16 |
| 10243069 | Gallium nitride transistor having a source/drain structure including a single-crystal portion abutting a 2D electron gas | Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner, Robert S. Chau | 2019-03-26 |
| 10229991 | III-N epitaxial device structures on free standing silicon mesas | Sansaptak Dasgupta, Sanaz K. Gardner, Marko Radosavljevic, Seung Hoon Sung, Benjamin Chu-Kung +1 more | 2019-03-12 |
| 10217673 | Integrated circuit die having reduced defect group III-nitride structures and methods associated therewith | Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau +1 more | 2019-02-26 |
| 10211327 | Semiconductor devices with raised doped crystalline structures | Marko Radosavljevic, Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Robert S. Chau | 2019-02-19 |
| 10204989 | Method of fabricating semiconductor structures on dissimilar substrates | Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more | 2019-02-12 |
| 10186581 | Group III-N nanowire transistors | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2019-01-22 |
| 10170612 | Epitaxial buffer layers for group III-N transistors on silicon substrates | Sansaptak Dasgupta, Niloy Mukherjee, Marko Radosavljevic, Robert S. Chau | 2019-01-01 |
| 10134727 | High breakdown voltage III-N depletion mode MOS capacitors | Sansaptak Dasgupta, Gerhard Schrom, Valluri Rao, Robert S. Chau | 2018-11-20 |
| 10096682 | III-N devices in Si trenches | Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more | 2018-10-09 |
| 10096683 | Group III-N transistor on nanoscale template structures | Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2018-10-09 |
| 10056456 | N-channel gallium nitride transistors | Sansaptak Dasgupta, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner, Robert S. Chau | 2018-08-21 |
| 10050015 | Multi-device flexible electronics system on a chip (SOC) process integration | Ravi Pillarisetty, Sansaptak Dasgupta, Niloy Mukherjee, Brian S. Doyle, Marko Radosavljevic | 2018-08-14 |
| 10032911 | Wide band gap transistor on non-native semiconductor substrate | Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2018-07-24 |
| 10026845 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2018-07-17 |
| 10020371 | Contact techniques and configurations for reducing parasitic resistance in nanowire transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Willy Rachmady, Van H. Le, Gilbert Dewey +3 more | 2018-07-10 |
| 9972686 | Germanium tin channel transistors | Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic +4 more | 2018-05-15 |
| 9947780 | High electron mobility transistor (HEMT) and method of fabrication | Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2018-04-17 |
| 9922826 | Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith | Sansaptak Dasgupta, Marko Radosavljevic, Robert S. Chau, Sanaz K. Gardner, Seung Hoon Sung | 2018-03-20 |
| 9923087 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Marko Radosavljevic, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more | 2018-03-20 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2018-01-09 |