Issued Patents All Time
Showing 26–50 of 86 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8405164 | Tri-gate transistor device with stress incorporation layer and method of fabrication | Scott A. Hareland, Robert S. Chau, Brian S. Doyle, Suman Datta | 2013-03-26 |
| 8388854 | Methods of forming nanodots using spacer patterning techniques and structures formed thereby | Brian S. Doyle, Jack T. Kavalieros, Robert S. Chau | 2013-03-05 |
| 8294180 | CMOS devices with a single work function gate electrode and method of fabrication | Brian S. Doyle, Jack T. Kavalieros, Suman Datta, Justin K. Brask, Robert S. Chau | 2012-10-23 |
| 8288233 | Method to introduce uniaxial strain in multigate nanoscale transistors by self aligned SI to SIGE conversion processes and structures formed thereby | Brian S. Doyle, Jack T. Kavalieros, Suman Datta | 2012-10-16 |
| 8283653 | Non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more | 2012-10-09 |
| 8269209 | Isolation for nanowire devices | Uday Shah, Benjamin Chu-Kung, Ravi Pillarisetty, Marko Radosavljevic, Willy Rachmady | 2012-09-18 |
| 8264004 | Mechanism for forming a remote delta doping layer of a quantum well structure | Jack T. Kavalieros, Suman Datta, Amlan Majumdar, Robert S. Chau | 2012-09-11 |
| 8242001 | Apparatus and methods for improving parallel conduction in a quantum well device | Ravi Pillarisetty, Mantu K. Hudait, Benjamin Chu-Kung, Robert S. Chau | 2012-08-14 |
| 8237234 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Suman Datta, Brian S. Doyle, Shaofeng Yu +1 more | 2012-08-07 |
| 8211772 | Two-dimensional condensation for uniaxially strained semiconductor fins | Jack T. Kavalieros, Nancy Zelick, Markus Kuhn, Stephen M. Cea | 2012-07-03 |
| 8193523 | Germanium-based quantum well devices | Ravi Pillarisetty, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros, Marko Radosavljevic +5 more | 2012-06-05 |
| 8183556 | Extreme high mobility CMOS logic | Suman Datt{dot over (a)}, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Majumdar Amlan +3 more | 2012-05-22 |
| 8173495 | Semiconductor on insulator | Reza Arghavani, Robert S. Chau | 2012-05-08 |
| 8168508 | Method of isolating nanowires from a substrate | Benjamin Chu-Kung, Uday Shah, Ravi Pillarisetty, Marko Radosavljevic, Willy Rachmady | 2012-05-01 |
| 8169027 | Substrate band gap engineered multi-gate pMOS devices | Brian S. Doyle, Jack T. Kavalieros, Suman Datta | 2012-05-01 |
| 8120065 | Tensile strained NMOS transistor using group III-N source/drain regions | Suman Datta, Justin K. Brask, Jack T. Kavalieros, Mantu K. Hudait | 2012-02-21 |
| 8110458 | Fabrication of germanium nanowire transistors | Jack T. Kavalieros, Matthew V. Metz, Marko Radosavlievic, Robert S. Chau | 2012-02-07 |
| 8080820 | Apparatus and methods for improving parallel conduction in a quantum well device | Ravi Pillarisetty, Mantu Hudalt, Benjamin Chu-Kung, Robert S. Chau | 2011-12-20 |
| 7968957 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Suman Datta, Brian S. Doyle, Shaofeng Yu +1 more | 2011-06-28 |
| 7960794 | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow | Brian S. Doyle, Suman Datta, Nancy Zelick, Robert S. Chau | 2011-06-14 |
| 7948010 | Dual seed semiconductor photodetectors | Miriam Reshotko | 2011-05-24 |
| 7902014 | CMOS devices with a single work function gate electrode and method of fabrication | Brian S. Doyle, Jack T. Kavalieros, Suman Datta, Justin K. Brask, Robert S. Chau | 2011-03-08 |
| 7888221 | Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions | Jack T. Kavalieros, Matthew V. Metz, Gilbert Dewey, Justin K. Brask, Suman Datta +1 more | 2011-02-15 |
| 7884354 | Germanium on insulator (GOI) semiconductor substrates | Ravi Pillarisetty, Willy Rachmady, Marko Radosavljevic | 2011-02-08 |
| 7875932 | Semiconductor on insulator apparatus | Reza Arghavani, Robert S. Chau | 2011-01-25 |