Issued Patents All Time
Showing 26–50 of 178 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11101181 | Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-08-24 |
| 11081400 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-08-03 |
| 11081482 | Fabrication of vertical fin field effect transistors having top air spacers and a self aligned top junction | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-08-03 |
| 11069800 | Single electron transistor with gap tunnel barriers | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-07-20 |
| 11062965 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-07-13 |
| 11062959 | Inner spacer and junction formation for integrating extended-gate and standard-gate nanosheet transistors | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-07-13 |
| 11049935 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Xin Miao | 2021-06-29 |
| 11038015 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Xin Miao | 2021-06-15 |
| 11011411 | Semiconductor wafer having integrated circuits with bottom local interconnects | Chen Zhang, Xin Miao, Kangguo Cheng | 2021-05-18 |
| 10991798 | Replacement sacrificial nanosheets having improved etch selectivity | Chen Zhang, Kangguo Cheng, Xin Miao | 2021-04-27 |
| 10985161 | Single diffusion break isolation for gate-all-around field-effect transistor devices | Xin Miao, Chen Zhang, Kangguo Cheng | 2021-04-20 |
| 10985073 | Vertical field effect transistor replacement metal gate fabrication | Ruilong Xie, Brent A. Anderson, Zuoguang Liu | 2021-04-20 |
| 10971585 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gates | Choonghyun Lee, Injo Ok, Soon-Cheon Seo | 2021-04-06 |
| 10971522 | High mobility complementary metal-oxide-semiconductor (CMOS) devices with fins on insulator | Xin Miao, Chen Zhang, Kangguo Cheng | 2021-04-06 |
| 10964602 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-03-30 |
| 10964601 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-03-30 |
| 10957798 | Nanosheet transistors with transverse strained channel regions | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-03-23 |
| 10957783 | Fin cut etch process for vertical transistor devices | Chen Zhang, Kangguo Cheng, Xin Miao | 2021-03-23 |
| 10957601 | Self-aligned fin recesses in nanosheet field effect transistors | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2021-03-23 |
| 10944013 | Self-aligned source/drain contact for vertical field effect transistor | Chen Zhang, Kangguo Cheng, Xin Miao | 2021-03-09 |
| 10937890 | Vertical field-effect transistor late gate recess process with improved inter-layer dielectric protection | Ruilong Xie, Pietro Montanini, Hemanth Jagannathan | 2021-03-02 |
| 10930778 | Vertical transistor devices with composite high-K and low-K spacers with a controlled top junction | Kangguo Cheng, Chen Zhang, Xin Miao | 2021-02-23 |
| 10930756 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Xin Miao, Chen Zhang | 2021-02-23 |
| 10910482 | Nanosheet with changing SiGe percentage for SiGe lateral recess | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-02-02 |
| 10910372 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-02-02 |