Issued Patents All Time
Showing 51–75 of 178 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10902910 | Phase change memory (PCM) with gradual reset characteristics | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-01-26 |
| 10903358 | Vertical fin field effect transistor with reduced gate length variations | Chen Zhang, Kangguo Cheng, Xin Miao | 2021-01-26 |
| 10903337 | Air gap spacer with wrap-around etch stop layer under gate spacer | Chen Zhang, Kangguo Cheng, Xin Miao, Peng Xu | 2021-01-26 |
| 10903331 | Positioning air-gap spacers in a transistor for improved control of parasitic capacitance | Nicolas Loubet, Kangguo Cheng, Julien Frougier | 2021-01-26 |
| 10903212 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-01-26 |
| 10903123 | High threshold voltage FET with the same fin height as regular threshold voltage vertical FET | Xin Miao, Kangguo Cheng, Chen Zhang | 2021-01-26 |
| 10886384 | Fabrication of a vertical fin field effect transistor (vertical finFET) with a self-aligned gate and fin edges | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-01-05 |
| 10886391 | Single-electron transistor with wrap-around gate | Kangguo Cheng, Xin Miao, Chen Zhang | 2021-01-05 |
| 10833176 | Selectively formed gate sidewall spacer | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-11-10 |
| 10833158 | III-V segmented finFET free of wafer bonding | Xin Miao, Chen Zhang, Kangguo Cheng | 2020-11-10 |
| 10811495 | Vertical field effect transistor with uniform gate length | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-10-20 |
| 10796967 | Vertical field effect transistor (FET) with controllable gate length | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-10-06 |
| 10784364 | Nanosheet with changing SiGe pecentage for SiGe lateral recess | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-09-22 |
| 10741557 | Hybrid high mobility channel transistors | Xin Miao, Chen Zhang, Kangguo Cheng | 2020-08-11 |
| 10734287 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-08-04 |
| 10734501 | Metal gate structure having gate metal layer with a top portion width smaller than a bottom portion width to reduce transistor gate resistance | Xin Miao, Kangguo Cheng, Chen Zhang | 2020-08-04 |
| 10672888 | Vertical transistors having improved gate length control | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-06-02 |
| 10665694 | Vertical transistors having improved gate length control | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-05-26 |
| 10665666 | Method of forming III-V on insulator structure on semiconductor substrate | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-05-26 |
| 10658493 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Xin Miao, Chen Zhang | 2020-05-19 |
| 10644150 | Tunnel field-effect transistor with reduced subthreshold swing | Xin Miao, Chen Zhang, Kangguo Cheng | 2020-05-05 |
| 10636895 | Vertical transport field effect transistor on silicon with defined junctions | Chen Zhang, Kangguo Cheng, Xin Miao | 2020-04-28 |
| 10617893 | Beam shaping assembly for neutron capture therapy | Yuan-Hao Liu, Wei-Lin Chen, Pei-Yi Lee, Ming-Chuan Chang | 2020-04-14 |
| 10622354 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-14 |
| 10622454 | Formation of a semiconductor device with RIE-free spacers | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-14 |