Issued Patents All Time
Showing 76–100 of 178 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10622264 | Nanosheet devices with different types of work function metals | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-14 |
| 10615267 | Semiconductor device strain relaxation buffer layer | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-07 |
| 10615256 | Nanosheet transistor gate structure having reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-04-07 |
| 10615258 | Nanosheet semiconductor structure with inner spacer formed by oxidation | Xin Miao, Kangguo Cheng, Chen Zhang | 2020-04-07 |
| 10607892 | Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip | Xin Miao, Kangguo Cheng, Chen Zhang | 2020-03-31 |
| 10607894 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-03-31 |
| 10608083 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Xin Miao | 2020-03-31 |
| 10600886 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-03-24 |
| 10592698 | Analog-based multiple-bit chip security | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-03-17 |
| 10593753 | Vertical field effect transistor (VFET) device with controllable top spacer | Chen Zhang, Kangguo Cheng, Xin Miao | 2020-03-17 |
| 10586856 | Nanosheet FET device with epitaxial nucleation | Nicolas Loubet, Julien Frougier, Zhenxing Bi | 2020-03-10 |
| 10580709 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-03-03 |
| 10566445 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Xin Miao, Chen Zhang | 2020-02-18 |
| 10566444 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Kangguo Cheng, Xin Miao | 2020-02-18 |
| 10559504 | High mobility semiconductor fins on insulator | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-02-11 |
| 10559502 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-02-11 |
| 10553493 | Fabrication of a vertical transistor with self-aligned bottom source/drain | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-02-04 |
| 10535652 | Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction | Kangguo Cheng, Xin Miao, Chen Zhang | 2020-01-14 |
| 10529823 | Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers | Xin Miao, Kangguo Cheng, Chen Zhang | 2020-01-07 |
| 10529713 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Xin Miao, Kangguo Cheng, Chen Zhang | 2020-01-07 |
| 10505048 | Self-aligned source/drain contact for vertical field effect transistor | Chen Zhang, Kangguo Cheng, Xin Miao | 2019-12-10 |
| 10505019 | Vertical field effect transistors with self aligned source/drain junctions | Xin Miao, Chen Zhang, Kangguo Cheng | 2019-12-10 |
| 10504793 | Hybrid-channel nano-sheet FETs | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2019-12-10 |
| 10497799 | Dummy dielectric fins for finFETs with silicon and silicon germanium channels | Kangguo Cheng, Xin Miao, Chen Zhang | 2019-12-03 |
| 10490453 | High threshold voltage FET with the same fin height as regular threshold voltage vertical FET | Xin Miao, Kangguo Cheng, Chen Zhang | 2019-11-26 |