Issued Patents All Time
Showing 351–375 of 462 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9412820 | Semiconductor device with thinned channel region and related methods | Qing Liu, Tenko Yamashita, Chun-Chen Yeh | 2016-08-09 |
| 9406682 | Method and structure for preventing epi merging in embedded dynamic random access memory | Kangguo Cheng, Ali Khakifirooz | 2016-08-02 |
| 9390981 | Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides | Andres Bryant, Tenko Yamashita | 2016-07-12 |
| 9379025 | Method of forming source/drain contacts in unmerged FinFETs | Kangguo Cheng, Ali Khakifirooz | 2016-06-28 |
| 9378952 | Tall relaxed high percentage silicon germanium fins on insulator | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2016-06-28 |
| 9373550 | Selectively degrading current resistance of field effect transistor devices | Effendi Leobandung, Dieter Wendel, Tenko Yamashita | 2016-06-21 |
| 9373618 | Integrated FinFET capacitor | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2016-06-21 |
| 9362407 | Symmetrical extension junction formation with low-K spacer and dual epitaxial process in FinFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2016-06-07 |
| 9362285 | Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETs | Kangguo Cheng, Ali Khakifirooz | 2016-06-07 |
| 9362170 | Dielectric liner for a self-aligned contact via structure | Kangguo Cheng, Ali Khakifirooz | 2016-06-07 |
| 9349863 | Anchored stress-generating active semiconductor regions for semiconductor-on-insulator finfet | Krishna Iyengar, Tenko Yamashita, Chun-Chen Yeh | 2016-05-24 |
| 9337317 | Semiconductor device including finFET and diode having reduced defects in depletion region | Tenko Yamashita | 2016-05-10 |
| 9337315 | FinFET spacer formation by oriented implantation | Kangguo Cheng, Bruce B. Doris, Johnathan E. Faltermeier | 2016-05-10 |
| 9337254 | Integrated FinFET capacitor | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2016-05-10 |
| 9324870 | Fin field effect transistor including asymmetric raised active regions | Kangguo Cheng, Ali Khakifirooz | 2016-04-26 |
| 9324842 | Buried local interconnect in finfet structure and method of fabricating same | Hui Zang, Chun-Chen Yeh, Tenko Yamashita | 2016-04-26 |
| 9324709 | Self-aligned gate contact structure | Kangguo Cheng, Ali Khakifirooz, Viraj Y. Sardesai, Raghavasimhan Sreenivasan | 2016-04-26 |
| 9318578 | FinFET spacer formation by oriented implantation | Kangguo Cheng, Bruce B. Doris, Johnathan E. Faltermeier | 2016-04-19 |
| 9318384 | Dielectric liner for a self-aligned contact via structure | Kangguo Cheng, Ali Khakifirooz | 2016-04-19 |
| 9318582 | Method of preventing epitaxy creeping under the spacer | Kangguo Cheng, Ali Khakifirooz, Sreenivasan Raghavasimhan | 2016-04-19 |
| 9312275 | FinFET with reduced capacitance | Kangguo Cheng, Ali Khakifirooz, Charles W. Koburger, III | 2016-04-12 |
| 9299703 | CMOS transistors with identical active semiconductor region shapes | Kangguo Cheng, Ali Khakifirooz | 2016-03-29 |
| 9293463 | CMOS transistors including gate spacers of the same thickness | Kangguo Cheng, Ali Khakifirooz | 2016-03-22 |
| 9293464 | Structure to enhance gate induced strain effect in multigate devices | Pranita Kerber, Junli Wang, Tenko Yamashita, Chun-Chen Yeh | 2016-03-22 |
| 9281381 | Forming strained and relaxed silicon and silicon germanium fins on the same wafer | Bruce B. Doris, Ali Khakifirooz, Tenko Yamashita, Chun-Chen Yeh | 2016-03-08 |