Issued Patents All Time
Showing 101–125 of 605 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11456416 | Resistive switching memory cell | Praneet Adusumilli, Reinaldo Vega, Cheng Chi | 2022-09-27 |
| 11444165 | Asymmetric threshold voltages in semiconductor devices | Alexander Reznicek, Jingyun Zhang, Choonghyun Lee, Pouya Hashemi | 2022-09-13 |
| 11437102 | Memory erasure using proximity heaters | Guy M. Cohen, Nanbo Gong | 2022-09-06 |
| 11430954 | Resistance drift mitigation in non-volatile memory cell | Praneet Adusumilli, Anirban Chandra, Cheng Chi, Reinaldo Vega | 2022-08-30 |
| 11430660 | Confined work function material for gate-all around transistor devices | Jingyun Zhang, Choonghyun Lee, Alexander Reznicek, Pouya Hashemi | 2022-08-30 |
| 11430513 | Non-volatile memory structure and method for low programming voltage for cross bar array | Soon-Cheon Seo, Youngseok Kim, Dexin Kong, Hiroyuki Miyazoe | 2022-08-30 |
| 11430510 | Multi-level ferroelectric field-effect transistor devices | Nanbo Gong, Guy M. Cohen | 2022-08-30 |
| 11424362 | NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets | Reinaldo Vega, Cheng Chi, Praneet Adusumilli | 2022-08-23 |
| 11387342 | Multi threshold voltage for nanosheet | Jingyun Zhang, Choonghyun Lee, Alexander Reznicek | 2022-07-12 |
| 11379125 | Trusted field programmable gate array | Jean-Olivier Plouchart, Arvind Kumar, Dirk Pfeiffer | 2022-07-05 |
| D956001 | Programmable controller | Hiroyuki Kato, Hiroyuki Onojima, Kazuma Takahata, Mitsuhiro Yamada, Atsutomo Hayamizu | 2022-06-28 |
| 11362274 | Laterally switching cell having sub-stoichiometric metal oxide active layer | John Rozen, Martin M. Frank, Yohei Ogawa | 2022-06-14 |
| 11335730 | Vertical resistive memory device with embedded selectors | Praneet Adusumilli, Reinaldo Vega, Cheng Chi | 2022-05-17 |
| 11322202 | Semiconductor logic circuits including a non-volatile memory cell | Nanbo Gong, Guy M. Cohen | 2022-05-03 |
| 11309383 | Quad-layer high-k for metal-insulator-metal capacitors | Kisik Choi, Paul C. Jamison, John G. Massey, Eduard A. Cartier | 2022-04-19 |
| 11302810 | Ferroelectric field effect transistor with nanowire core | Nanbo Gong, Guy M. Cohen | 2022-04-12 |
| 11302794 | FinFET with dual work function metal | Ruilong Xie, Alexander Reznicek, Pouya Hashemi | 2022-04-12 |
| 11295988 | Semiconductor FET device with bottom isolation and high-κ first | Ruilong Xie, Julien Frougier, Jingyun Zhang, Alexander Reznicek | 2022-04-05 |
| 11289650 | Stacked access device and resistive memory | Hiroyuki Miyazoe, Gloria W. Fraczak, Kumar R. Virwani | 2022-03-29 |
| 11276732 | Semiconductor memory devices formed using selective barrier metal removal | Hiroyuki Miyazoe | 2022-03-15 |
| 11258012 | Oxygen-free plasma etching for contact etching of resistive random access memory | Devi Koty, Qingyun Yang, Hiroyuki Miyazoe, Eduard A. Cartier, Vijay Narayanan +1 more | 2022-02-22 |
| 11251094 | Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor | Choonghyun Lee, Alexander Reznicek, Jingyun Zhang | 2022-02-15 |
| 11244999 | Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end | Martin M. Frank, Xiao Sun, Jin-Ping Han, Vijay Narayanan | 2022-02-08 |
| 11239359 | Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer | Jingyun Zhang, Choonghyun Lee, Pouya Hashemi, Alexander Reznicek | 2022-02-01 |
| 11232824 | Non-volatile analog resistive memory cells implementing ferroelectric select transistors | Nanbo Gong | 2022-01-25 |