SH

Steven J. Holmes

IBM: 329 patents #61 of 70,183Top 1%
Globalfoundries: 6 patents #578 of 4,424Top 15%
FS Freeescale Semiconductor: 2 patents #1,335 of 3,767Top 40%
HL Highlight Games Limited: 2 patents #3 of 7Top 45%
📍 Ossining, NY: #1 of 613 inventorsTop 1%
🗺 New York: #46 of 115,490 inventorsTop 1%
Overall (All Time): #943 of 4,157,543Top 1%
341
Patents All Time

Issued Patents All Time

Showing 201–225 of 341 patents

Patent #TitleCo-InventorsDate
7233071 Low-k dielectric layer based upon carbon nanostructures Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III 2007-06-19
7230681 Method and apparatus for immersion lithography Toshiharu Furukawa, Mark C. Hakey, Daniel A. Corliss, David V. Horak, Charles W. Koburger, III 2007-06-12
7230335 Inspection methods and structures for visualizing and/or detecting specific chip structures Jerome L. Cann, Leendert M. Huisman, Cherie R. Kagan, Leah Pastel, Paul William Pastel +2 more 2007-06-12
7229909 Integrated circuit chip utilizing dielectric layer having oriented cylindrical voids formed from carbon nanotubes Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Peter H. Mitchell 2007-06-12
7229889 Methods for metal plating of gate conductors and semiconductors formed thereby Charles W. Koburger, III, David V. Horak, Toshiharu Furukawa, Mark C. Hakey 2007-06-12
7227233 Silicon-on-insulator (SOI) Read Only Memory (ROM) array and method of making a SOI ROM Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Jack A. Mandelman 2007-06-05
7211844 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Peter H. Mitchell, Larry Nesbit 2007-05-01
7176089 Vertical dual gate field effect transistor Toshiharu Furukawa, Mark C. Hakey, David V. Horak, James M. Leas, William H. Ma +1 more 2007-02-13
7129097 Integrated circuit chip utilizing oriented carbon nanotube conductive layers Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Peter H. Mitchell 2006-10-31
7118997 Implantation of gate regions in semiconductor device fabrication Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles Koburger 2006-10-10
7102201 Strained semiconductor device structures Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III 2006-09-05
7087531 Shallow trench isolation formation Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III 2006-08-08
7084060 Forming capping layer over metal wire structure using selective atomic layer deposition Toshiharu Furukawa, David V. Horak, Charles W. Koburger, III 2006-08-01
7071047 Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III 2006-07-04
7038299 Selective synthesis of semiconducting carbon nanotubes Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Peter H. Mitchell +1 more 2006-05-02
7030008 Techniques for patterning features in semiconductor devices Scott D. Allen, Katherina Babich, Arpan Mahorowala, Dirk Pfeiffer, Richard Wise 2006-04-18
6998204 Alternating phase mask built by additive film deposition Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III, Peter H. Mitchell +1 more 2006-02-14
6998332 Method of independent P and N gate length control of FET device made by sidewall image transfer technique Toshiharu Furukawa, William H. Ma 2006-02-14
6995065 Selective post-doping of gate structures by means of selective oxide growth Anthony I. Chou, Toshiharu Furukawa 2006-02-07
6995051 Irradiation assisted reactive ion etching Toshiharu Furukawa, Mark C. Hakey, David V. Horak 2006-02-07
6989323 Method for forming narrow gate structures on sidewalls of a lithographically defined sacrificial material Bruce B. Doris, Toshiharu Furukawa, Mark C. Hakey, David V. Horak, Charles W. Koburger, III 2006-01-24
6989308 Method of forming FinFET gates without long etches Toshiharu Furukawa, Mark C. Hakey, David Vaclav Hofak, Charles W. Koburger, III, Peter H. Mitchell +1 more 2006-01-24
6963132 Integrated semiconductor device having co-planar device surfaces Mark C. Hakey, David V. Horak, Harold G. Linde, Edmund J. Sprogis 2005-11-08
6940134 Semiconductor with contact contacting diffusion adjacent gate electrode Toshiharu Furukawa, Mark C. Hakey, David V. Horak 2005-09-06
6936879 Increased capacitance trench capacitor Toshiharu Furukawa, Mark C. Hakey, William H. Ma 2005-08-30