Issued Patents All Time
Showing 401–425 of 581 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9716145 | Strained stacked nanowire field-effect transistors (FETs) | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-07-25 |
| 9698145 | Implementation of long-channel thick-oxide devices in vertical transistor flow | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-07-04 |
| 9691854 | Semiconductor device including multiple fin heights | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-06-27 |
| 9685510 | SiGe CMOS with tensely strained NFET and compressively strained PFET | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-06-20 |
| 9685409 | Top metal contact for vertical transistor structures | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-06-20 |
| 9680018 | Method of forming high-germanium content silicon germanium alloy fins on insulator | Renee T. Mo, John A. Ott, Alexander Reznicek | 2017-06-13 |
| 9679763 | Silicon-on-insulator fin field-effect transistor device formed on a bulk substrate | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2017-06-13 |
| 9673307 | Lateral bipolar junction transistor with abrupt junction and compound buried oxide | Kevin K. Chan, Tak H. Ning, Alexander Reznicek | 2017-06-06 |
| 9666669 | Superlattice lateral bipolar junction transistor | Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2017-05-30 |
| 9666493 | Semiconductor device structure with 110-PFET and 111-NFET curent flow direction | Ali Khakifirooz, Shogo Mochizuki, Alexander Reznicek | 2017-05-30 |
| 9666489 | Stacked nanowire semiconductor device | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-30 |
| 9660032 | Method and apparatus providing improved thermal conductivity of strain relaxed buffer | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-23 |
| 9660059 | Fin replacement in a field-effect transistor | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2017-05-23 |
| 9659963 | Contact formation to 3D monolithic stacked FinFETs | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-05-23 |
| 9659829 | Hybrid orientation vertically stacked III-V and Ge gate-all-around CMOS | Karthik Balakrishnan, Sanghoon Lee, Alexander Reznicek | 2017-05-23 |
| 9659823 | Highly scaled tunnel FET with tight pitch and method to fabricate same | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-23 |
| 9653582 | Forming a Fin using double trench epitaxy | Veeraraghavan S. Basker, Shogo Mochizuki, Alexander Reznicek | 2017-05-16 |
| 9653580 | Semiconductor device including strained finFET | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-16 |
| 9653465 | Vertical transistors having different gate lengths | Karthik Balakrishnan, Tak H. Ning, Alexander Reznicek | 2017-05-16 |
| 9653362 | Complementary heterogeneous MOSFET using global SiGe substrate and hard-mask memorized germanium dilution for nFET | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-16 |
| 9653289 | Fabrication of nano-sheet transistors with different threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-16 |
| 9647123 | Self-aligned sigma extension regions for vertical transistors | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-09 |
| 9647113 | Strained FinFET by epitaxial stressor independent of gate pitch | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Charan V. Surisetty | 2017-05-09 |
| 9647112 | Fabrication of strained vertical P-type field effect transistors by bottom condensation | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-09 |
| 9640667 | III-V vertical field effect transistors with tunable bandgap source/drain regions | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-02 |