Issued Patents All Time
Showing 451–475 of 581 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9570360 | Dual channel material for finFET for high performance CMOS | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2017-02-14 |
| 9570443 | Field effect transistor including strained germanium fins | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-02-14 |
| 9570551 | Replacement III-V or germanium nanowires by unilateral confined epitaxial growth | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-02-14 |
| 9570575 | Capacitor in strain relaxed buffer | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-02-14 |
| 9570297 | Elimination of defects in long aspect ratio trapping trench structures | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-02-14 |
| 9564326 | Lithography using interface reaction | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-02-07 |
| 9564373 | Forming a CMOS with dual strained channels | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-02-07 |
| 9558950 | Overhang hardmask to prevent parasitic epitaxial nodules at gate end during source drain epitaxy | Kangguo Cheng, Shogo Mochizuki, Alexander Reznicek | 2017-01-31 |
| 9559013 | Stacked nanowire semiconductor device | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-01-31 |
| 9553107 | Shallow extension junction | Kevin K. Chan, Effendi Leobandung, Dae-Gyu Park, Min Yang | 2017-01-24 |
| 9543302 | Forming IV fins and III-V fins on insulator | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2017-01-10 |
| 9536795 | Multiple threshold voltage trigate devices using 3D condensation | Karthik Balakrishnan | 2017-01-03 |
| 9536939 | High density vertically integrated FEOL MIM capacitor | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-01-03 |
| 9530772 | Methods of manufacturing devices including gates with multiple lengths | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2016-12-27 |
| 9530669 | Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2016-12-27 |
| 9525064 | Channel-last replacement metal-gate vertical field effect transistor | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2016-12-20 |
| 9525027 | Lateral bipolar junction transistor having graded SiGe base | Ali Khakifirooz, Darsen D. Lu, Alexander Reznicek, Dominic J. Schepis | 2016-12-20 |
| 9524969 | Integrated circuit having strained fins on bulk substrate | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2016-12-20 |
| 9520469 | Fabrication of fin structures having high germanium content | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2016-12-13 |
| 9520397 | Abrupt source/drain junction formation using a diffusion facilitation layer | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-12-13 |
| 9520328 | Type III-V and type IV semiconductor device formation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-12-13 |
| 9515194 | Nano-ribbon channel transistor with back-bias control | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2016-12-06 |
| 9514997 | Silicon-germanium FinFET device with controlled junction | Kangguo Cheng, Kam-Leung Lee, Alexander Reznicek | 2016-12-06 |
| 9515173 | Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek | 2016-12-06 |
| 9508810 | FET with air gap spacer for improved overlap capacitance | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-11-29 |