MI

Meikei Ieong

IBM: 86 patents #750 of 70,183Top 2%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
TSMC: 1 patents #8,466 of 12,232Top 70%
📍 Wappingers Falls, NY: #16 of 884 inventorsTop 2%
🗺 New York: #724 of 115,490 inventorsTop 1%
Overall (All Time): #18,884 of 4,157,543Top 1%
88
Patents All Time

Issued Patents All Time

Showing 76–88 of 88 patents

Patent #TitleCo-InventorsDate
6916698 High performance CMOS device structure with mid-gap metal gate Anda C. Mocuta, Ricky S. Amos, Diane C. Boyd, Dan M. Mocuta, Huajie Chen 2005-07-12
6914303 Ultra thin channel MOSFET Bruce B. Doris, Thomas S. Kanarsky, Ying Zhang, Huilong Zhu, Omer H. Dokumaci 2005-07-05
6911383 Hybrid planar and finFET CMOS devices Bruce B. Doris, Diane C. Boyd, Thomas S. Kanarsky, Jakub Kedzierski, Min Yang 2005-06-28
6905941 Structure and method to fabricate ultra-thin Si channel devices Bruce B. Doris, Thomas S. Kanarsky, Wesley C. Natzle 2005-06-14
6833569 Self-aligned planar double-gate process by amorphization Omer H. Dokumaci, Bruce B. Doris, Suryanarayan G. Hegde, Erin C. Jones 2004-12-21
6830962 Self-aligned SOI with different crystal orientation using wafer bonding and SIMOX processes Kathryn Guarini, Leathen Shi, Min Yang 2004-12-14
6821826 Three dimensional CMOS integrated circuits having device layers built on different crystal oriented wafers Victor Chan, Kathryn Guarini 2004-11-23
6815278 Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations Min Yang 2004-11-09
6762469 High performance CMOS device structure with mid-gap metal gate Anda C. Mocuta, Ricky S. Amos, Diane C. Boyd, Dan M. Mocuta, Huajie Chen 2004-07-13
6677646 Method and structure of a disposable reversed spacer process for high performance recessed channel CMOS Omer H. Dokumaci, Thomas S. Kanarsky, Victor Ku 2004-01-13
6492212 Variable threshold voltage double gated transistors and method of fabrication Edward J. Nowak 2002-12-10
6353249 MOSFET with high dielectric constant gate insulator and minimum overlap capacitance Diane C. Boyd, Hussein I. Hanafi, Wesley C. Natzle 2002-03-05
6271094 Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance Diane C. Boyd, Hussein I. Hanafi, Wesley C. Natzle 2001-08-07