Issued Patents All Time
Showing 101–125 of 190 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9190419 | Diode structure and method for FINFET technologies | Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2015-11-17 |
| 9184290 | Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer | Szu-Lin Cheng, Jack O. Chu, Jeng-Bang Yau | 2015-11-10 |
| 9177956 | Field effect transistor (FET) with self-aligned contacts, integrated circuit (IC) chip and method of manufacture | Szu-Lin Cheng, Jack O. Chu, Jeng-Bang Yau | 2015-11-03 |
| 9105650 | Lateral bipolar transistor and CMOS hybrid technology | Josephine B. Chang, Gen P. Lauer, Jeffrey W. Sleight | 2015-08-11 |
| 9093379 | Silicidation blocking process using optically sensitive HSQ resist and organic planarizing layer | Michael A. Guillorn, Jeffrey W. Sleight | 2015-07-28 |
| 9087772 | Device and method for forming sharp extension region with controllable junction depth and lateral overlap | Effendi Leobandung, Ghavam G. Shahidi | 2015-07-21 |
| 9059095 | Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact | Szu-Lin Cheng, Jack O. Chu, Jeng-Bang Yau | 2015-06-16 |
| 9059205 | Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same | Szu-Lin Cheng, Jack O. Chu, Jeng-Bang Yau | 2015-06-16 |
| 9059289 | Stringer-free gate electrode for a suspended semiconductor fin | Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2015-06-16 |
| 9048261 | Fabrication of field-effect transistors with atomic layer doping | Kevin K. Chan, Young-Hee Kim, Ramachandran Muralidhar, Dae-Gyu Park, Xinhui Wang +1 more | 2015-06-02 |
| 9029213 | Stringer-free gate electrode for a suspended semiconductor fin | Josephine B. Chang, Chung-Hsun Lin, Jeffrey Sleight | 2015-05-12 |
| 9006087 | Diode structure and method for wire-last nanomesh technologies | Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2015-04-14 |
| 9006108 | Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors | Nicholas C. M. Fuller, Steve Koester, Ying Zhang | 2015-04-14 |
| 8994108 | Diode structure and method for wire-last nanomesh technologies | Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2015-03-31 |
| 8969145 | Wire-last integration method and structure for III-V nanowire devices | Josephine B. Chang, Jeffrey W. Sleight, Amlan Majumdar | 2015-03-03 |
| 8969964 | Embedded silicon germanium N-type field effect transistor for reduced floating body effect | Leland Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2015-03-03 |
| 8946680 | TFET with nanowire source | Sarunya Bangsaruntip, Amlan Majumdar, Jeffrey W. Sleight | 2015-02-03 |
| 8940591 | Embedded silicon germanium N-type filed effect transistor for reduced floating body effect | Leland Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2015-01-27 |
| 8928083 | Diode structure and method for FINFET technologies | Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2015-01-06 |
| 8927397 | Diode structure and method for gate all around silicon nanowire technologies | Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2015-01-06 |
| 8927431 | High-rate chemical vapor etch of silicon substrates | Stephen W. Bedell, Gen P. Lauer, Joseph S. Newbury | 2015-01-06 |
| 8928064 | Gate stack of boron semiconductor alloy, polysilicon and high-K gate dielectric for low voltage applications | Martin M. Frank, Jeffrey W. Sleight | 2015-01-06 |
| 8901655 | Diode structure for gate all around silicon nanowire technologies | Josephine B. Chang, Chung-Hsun Lin, Jeffrey W. Sleight | 2014-12-02 |
| 8900952 | Gate stack including a high-k gate dielectric that is optimized for low voltage applications | Martin M. Frank, Jeffrey W. Sleight | 2014-12-02 |
| 8900959 | Non-replacement gate nanomesh field effect transistor with pad regions | Josephine B. Chang, Paul Chang, Jeffrey W. Sleight | 2014-12-02 |