Issued Patents All Time
Showing 126–144 of 144 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6674102 | Sti pull-down to control SiGe facet growth | Mark D. Dupuis, Matthew D. Gallagher, Peter J. Geiss, Brett A. Philips | 2004-01-06 |
| 6670228 | Method of fabricating a polysilicon capacitor utilizing FET and bipolar base polysilicon layers | Gregory G. Freeman, Seshadri Subbanna | 2003-12-30 |
| 6667207 | High-dielectric constant insulators for FEOL capacitors | Arne Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Evgeni Gousev, Harald Okorn-Schmidt | 2003-12-23 |
| 6656815 | Process for implanting a deep subcollector with self-aligned photo registration marks | Louis D. Lanzerotti, John C. Malinowski | 2003-12-02 |
| 6534371 | C implants for improved SiGe bipolar yield | Kathryn T. Schonenberg | 2003-03-18 |
| 6528821 | Optimized reachthrough implant for simultaneously forming an MOS capacitor | David L. Harame | 2003-03-04 |
| 6521506 | Varactors for CMOS and BiCMOS technologies | James S. Dunn, Michael D. Gordon, Mohamed Hammad, Jeffrey B. Johnson, David C. Sheridan | 2003-02-18 |
| 6511873 | High-dielectric constant insulators for FEOL capacitors | Arne Ballantine, Douglas A. Buchanan, Eduard A. Cartier, Evgeni Gousev, Harald Okorn-Schmidt | 2003-01-28 |
| 6507063 | Poly-poly/MOS capacitor having a gate encapsulating first electrode layer | James S. Dunn, Stephen A. St. Onge | 2003-01-14 |
| 6448124 | Method for epitaxial bipolar BiCMOS | James S. Dunn, Peter J. Geiss, Peter B. Gray, David L. Harame, Kathryn T. Schonenberg +2 more | 2002-09-10 |
| 6440811 | Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration scheme | James S. Dunn, Stephen A. St. Onge | 2002-08-27 |
| 6429101 | Method of forming thermally stable polycrystal to single crystal electrical contact structure | Ricky S. Amos, Arne Ballantine, Gregory Bazan, Bomy Chen, Ramachandra Divakaruni +6 more | 2002-08-06 |
| 6426265 | Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology | Jack O. Chu, James S. Dunn, David R. Greenberg, David L. Harame, Basanth Jagannathan +4 more | 2002-07-30 |
| 6420747 | MOSCAP design for improved reliability | James S. Dunn, Peter J. Geiss, Douglas B. Hershberger, Stephen A. St. Onge | 2002-07-16 |
| 6399458 | Optimized reachthrough implant for simultaneously forming an MOS capacitor | David L. Harame | 2002-06-04 |
| 6271100 | Chemically enhanced anneal for removing trench stress resulting in improved bipolar yield | Arne Ballantine, Jeffrey D. Gilbert | 2001-08-07 |
| 6255185 | Two step anneal for controlling resistor tolerance | Glenn R. Miller, Sophia Maumovna Ratenberg | 2001-07-03 |
| 6218315 | HTO (high temperature oxide) deposition for capacitor dielectrics | Arne Watson Ballamine, Kevin K. Chan, Donna K. Johnson | 2001-04-17 |
| 5013395 | Continuous regeneration of acid solution | Lawrence Robert Blumberg, John A. Kurowski, Eugene A. Stromecki | 1991-05-07 |