Issued Patents All Time
Showing 26–35 of 35 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6593617 | Field effect transistors with vertical gate side walls and method for making such transistors | Stuart M. Burns, Hussein I. Hanafi, Yuan Taur, William C. Wille | 2003-07-15 |
| 6461529 | Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme | Stuart M. Burns, Hussein I. Hanafi, Waldemar Walter Kocon, William C. Wille, Richard S. Wise | 2002-10-08 |
| 6440808 | Damascene-gate process for the fabrication of MOSFET devices with minimum poly-gate depletion, silicided source and drain junctions, and low sheet resistance gate-poly | Stephen Bruce Brodsky, Hussein I. Hanafi, Ronnen Andrew Roy | 2002-08-27 |
| 6353249 | MOSFET with high dielectric constant gate insulator and minimum overlap capacitance | Hussein I. Hanafi, Meikei Ieong, Wesley C. Natzle | 2002-03-05 |
| 6271094 | Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance | Hussein I. Hanafi, Meikei Ieong, Wesley C. Natzle | 2001-08-07 |
| 6245619 | Disposable-spacer damascene-gate process for SUB 0.05 .mu.m MOS devices | Hussein I. Hanafi, Wesley C. Natzle | 2001-06-12 |
| 6221562 | Resist image reversal by means of spun-on-glass | Toshiharu Furukawa, Steven J. Holmes, William H. Ma, Paul A. Rabidoux, David V. Horak | 2001-04-24 |
| 6143635 | Field effect transistors with improved implants and method for making such transistors | Stuart M. Burns, Hussein I. Hanafi, Yuan Taur, William C. Wille | 2000-11-07 |
| 6040214 | Method for making field effect transistors having sub-lithographic gates with vertical side walls | Stuart M. Burns, Hussein I. Hanafi, Yuan Taur, William C. Wille | 2000-03-21 |
| 6014422 | Method for varying x-ray hybrid resist space dimensions | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, William H. Ma +1 more | 2000-01-11 |