| 10648074 |
Physical vapor deposition with isotropic neutral and non-isotropic ion velocity distribution at the wafer surface |
Daniel J. Hoffman, Karl M. Brown, Ying Rui |
2020-05-12 |
$50,210,000 |
| 10400328 |
Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surface |
Daniel J. Hoffman, Karl M. Brown, Ying Rui |
2019-09-03 |
$20,988,000 |
| 9856558 |
Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface |
Daniel J. Hoffman, Karl M. Brown, Ying Rui |
2018-01-02 |
$37,336,000 |
| 9593411 |
Physical vapor deposition chamber with capacitive tuning at wafer support |
Daniel J. Hoffman, Karl M. Brown, Ying Rui |
2017-03-14 |
$16,778,000 |
| 9017533 |
Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning |
John C. Forster, Daniel J. Hoffman, Xianmin Tang, Rongjun Wang |
2015-04-28 |
$17,425,000 |
| 8920611 |
Method for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning |
John C. Forster, Daniel J. Hoffman, Xianming Tang, Rongjun Wang |
2014-12-30 |
$17,286,000 |
| 8846451 |
Methods for depositing metal in high aspect ratio features |
Alan A. Ritchie, Karl M. Brown |
2014-09-30 |
$12,856,000 |
| 8562798 |
Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron |
Karl M. Brown, Vineet Haresh Mehta |
2013-10-22 |
$10,239,000 |
| 8563428 |
Methods for depositing metal in high aspect ratio features |
Karl M. Brown, Alan A. Ritchie, Ying Rui, Daniel J. Hoffman |
2013-10-22 |
$10,239,000 |
| 8512526 |
Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron |
Karl M. Brown, Vineet Haresh Mehta |
2013-08-20 |
$8,967,000 |
| 8491759 |
RF impedance matching network with secondary frequency and sub-harmonic variant |
Gerald E. Boston |
2013-07-23 |
|
| 8435379 |
Substrate cleaning chamber and cleaning and conditioning methods |
Vineet Haresh Mehta, Karl M. Brown, Daniel J. Hoffman, Steven C. Shannon, Keith A. Miller +1 more |
2013-05-07 |
$10,477,000 |
| 8123969 |
Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture |
Karl M. Brown, Vineet Haresh Mehta |
2012-02-28 |
$8,688,000 |
| 8070925 |
Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target |
Daniel J. Hoffman, Ying Rui, Karl M. Brown, Lara Hawrylchak |
2011-12-06 |
$11,052,000 |
| 8062484 |
Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target |
Karl M. Brown, Vineet Haresh Mehta |
2011-11-22 |
$8,445,000 |
| 7820020 |
Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas |
Karl M. Brown, Vineet Haresh Mehta, Ralf Hofmann |
2010-10-26 |
$13,462,000 |
| 7804040 |
Physical vapor deposition plasma reactor with arcing suppression |
Karl M. Brown, Semyon Sherstinksy, Vineet Haresh Mehta, Wei Wang, Kurt J. Ahmann +1 more |
2010-09-28 |
$15,575,000 |
| 7780814 |
Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products |
Kenneth Smyth, Mei Po (Mabel) Yeung |
2010-08-24 |
$4,612,000 |
| 7768269 |
Method of multi-location ARC sensing with adaptive threshold comparison |
Ryan Nunn-Gage |
2010-08-03 |
$9,713,000 |
| 7750644 |
System with multi-location arc threshold comparators and communication channels for carrying arc detection flags and threshold updating |
Ryan Nunn-Gage |
2010-07-06 |
$6,398,000 |
| 7750645 |
Method of wafer level transient sensing, threshold comparison and arc flag generation/deactivation |
Ryan Nunn-Gage |
2010-07-06 |
$6,398,000 |
| 7737702 |
Apparatus for wafer level arc detection at an electrostatic chuck electrode |
— |
2010-06-15 |
$8,018,000 |
| 7733095 |
Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode |
John C. Forster |
2010-06-08 |
$8,435,000 |
| 7541289 |
Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture |
Karl M. Brown, Vineet Haresh Mehta |
2009-06-02 |
$19,554,000 |
| 7399943 |
Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece |
Karl M. Brown, Vineet Haresh Mehta |
2008-07-15 |
$16,085,000 |
