Issued Patents All Time
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6958296 | CVD TiSiN barrier for copper integration | Ling Chen, Hyungsuk Alexander Yoon | 2005-10-25 |
| 6953742 | Tantalum barrier layer for copper metallization | Ling Chen, Seshadri Ganguli, Wei Cao | 2005-10-11 |
| 6905541 | Method and apparatus of generating PDMAT precursor | Ling Chen, Vincent Ku, Hua Chung, Seshadri Ganguli, Jenny Lin +3 more | 2005-06-14 |
| 6660622 | Process for removing an underlying layer and depositing a barrier layer in one reactor | Ling Chen, Seshadri Ganguli, Wei Cao | 2003-12-09 |
| 6607976 | Copper interconnect barrier layer structure and formation method | Ling Chen, Seshadri Ganguli, Wei Cao, Roderick C. Mosely, Mei Chang | 2003-08-19 |
| 6596085 | Methods and apparatus for improved vaporization of deposition material in a substrate processing system | John V. Schmitt, Shih-Hung Li, Anzhong Chang, Ling Chen | 2003-07-22 |
| 6596643 | CVD TiSiN barrier for copper integration | Ling Chen, Hyungsuk Alexander Yoon | 2003-07-22 |
| 6562715 | Barrier layer structure for copper metallization and method of forming the structure | Ling Chen | 2003-05-13 |
| 6498091 | Method of using a barrier sputter reactor to remove an underlying barrier layer | Ling Chen, Seshadri Ganguli, Wei Cao | 2002-12-24 |
| 6455421 | Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition | Toshio Itoh, Michael Yang | 2002-09-24 |
| 6358323 | Method and apparatus for improved control of process and purge material in a substrate processing system | John V. Schmitt, Frank Chang, Xin Guo, Ling Chen | 2002-03-19 |
| 6110530 | CVD method of depositing copper films by using improved organocopper precursor blend | Ling Chen, Seshadri Ganguli, Bo Zheng, Samuel Wilson | 2000-08-29 |