Issued Patents All Time
Showing 26–50 of 51 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6599810 | Shallow trench isolation formation with ion implantation | Nick Kepler, Larry Wang, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2003-07-29 |
| 6528858 | MOSFETs with differing gate dielectrics and method of formation | Bin Yu, Qi Xiang, Haihong Wang, Zoran Krivokapic | 2003-03-04 |
| 6380047 | Shallow trench isolation formation with two source/drain masks and simplified planarization mask | Basab Bandyopadhyay, Nick Kepler, Larry Wang, Effiong Ibok, Christopher F. Lyons | 2002-04-30 |
| 6380588 | Semiconductor device having uniform spacers | William G. En, Minh Van Ngo, Chih-Yuk Yang, David K. Foote, Scott A. Bell +1 more | 2002-04-30 |
| 6306710 | Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacer | Wei Long, Bill Liu, Scott A. Bell | 2001-10-23 |
| 6239031 | Stepper alignment mark structure for maintaining alignment integrity | Nick Kepler, Larry Wang, Basab Bandyopadhyah, Effiong Ibok, Christopher F. Lyons | 2001-05-29 |
| 6171962 | Shallow trench isolation formation without planarization mask | Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Larry Wang, Effiong Ibok | 2001-01-09 |
| 6162699 | Method for generating limited isolation trench width structures and a device having a narrow isolation trench surrounding its periphery | Larry Wang, Nick Kepler, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2000-12-19 |
| 6143624 | Shallow trench isolation formation with spacer-assisted ion implantation | Nick Kepler, Larry Wang, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2000-11-07 |
| 6130467 | Shallow trench isolation with spacers for improved gate oxide quality | Basab Bandyopadhyay, Nick Kepler, Larry Wang, Effiong Ibok, Christopher F. Lyons | 2000-10-10 |
| 6124183 | Shallow trench isolation formation with simplified reverse planarization mask | Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Larry Wang, Effiong Ibok | 2000-09-26 |
| 6121123 | Gate pattern formation using a BARC as a hardmask | Christopher F. Lyons, Scott A. Bell | 2000-09-19 |
| 6103611 | Methods and arrangements for improved spacer formation within a semiconductor device | William G. En, Minh Van Ngo, Chih-Yuh Yang, David K. Foote, Scott A. Bell +1 more | 2000-08-15 |
| 6090713 | Shallow trench isolation formation with simplified reverse planarization mask | Christopher F. Lyons, Basab Bandyophadhyay, Nick Kepler, Larry Wang, Effiong Ibok | 2000-07-18 |
| 6090712 | Shallow trench isolation formation with no polish stop | Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Larry Wang, Effiong Obok | 2000-07-18 |
| 6087271 | Methods for removal of an anti-reflective coating following a resist protect etching process | William G. En, Minh Van Ngo, Christopher F. Lyons, Maria C. Chan | 2000-07-11 |
| 6074927 | Shallow trench isolation formation with trench wall spacer | Nick Kepler, Basab Bandyopadhyay, Larry Wang, Effiong Ibok, Christopher F. Lyons | 2000-06-13 |
| 6066567 | Methods for in-situ removal of an anti-reflective coating during an oxide resistor protect etching process | William G. En, Minh Van Ngo | 2000-05-23 |
| 6037671 | Stepper alignment mark structure for maintaining alignment integrity | Nick Kepler, Larry Wang, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 2000-03-14 |
| 6027959 | Methods for in-situ removal of an anti-reflective coating during a nitride resistor protect etching process | William G. En, Minh Van Ngo, Maria C. Chan | 2000-02-22 |
| 5990524 | Silicon oxime spacer for preventing over-etching during local interconnect formation | William G. En, Minh Van Ngo, Chih-Yuh Yang, David K. Foote, Scott A. Bell +1 more | 1999-11-23 |
| 5970362 | Simplified shallow trench isolation formation with no polish stop | Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Larry Wang, Effiong Ibok | 1999-10-19 |
| 5970363 | Shallow trench isolation formation with improved trench edge oxide | Nick Kepler, Larry Wang, Basab Bandyopadhyay, Effiong Ibok, Christopher F. Lyons | 1999-10-19 |
| 5963841 | Gate pattern formation using a bottom anti-reflective coating | Christopher F. Lyons, Minh Van Ngo, Scott A. Bell, David K. Foote | 1999-10-05 |
| 5930645 | Shallow trench isolation formation with reduced polish stop thickness | Christopher F. Lyons, Basab Bandyopadhyay, Nick Kepler, Larry Wang, Effiong Ibok | 1999-07-27 |