CT

Cyrus E. Tabery

AM AMD: 73 patents #63 of 9,279Top 1%
AB Asml Netherlands B.V.: 8 patents #564 of 3,192Top 20%
Globalfoundries: 3 patents #1,029 of 4,424Top 25%
SL Spansion Llc.: 3 patents #241 of 769Top 35%
📍 Sunnyvale, CA: #119 of 14,302 inventorsTop 1%
🗺 California: #2,909 of 386,348 inventorsTop 1%
Overall (All Time): #19,197 of 4,157,543Top 1%
87
Patents All Time

Issued Patents All Time

Showing 76–87 of 87 patents

Patent #TitleCo-InventorsDate
6664154 Method of using amorphous carbon film as a sacrificial layer in replacement gate integration processes Scott A. Bell, Srikanteswara Dakshina-Murthy, Philip A. Fisher 2003-12-16
6656749 In-situ monitoring during laser thermal annealing Eric N. Paton, Robert B. Ogle, Bin Yu, Qi Xiang 2003-12-02
6654659 Quartz crystal monitor wafer for lithography and etch process monitoring Christopher F. Lyons 2003-11-25
6645797 Method for forming fins in a FinFET device using sacrificial carbon layer Matthew S. Buynoski, Srikanteswara Dakshina-Murthy, Haihong Wang, Chih-Yuh Yang, Bin Yu 2003-11-11
6605514 Planar finFET patterning using amorphous carbon Scott A. Bell, Srikanteswara Dakshina-Murthy 2003-08-12
6599766 Method for determining an anti reflective coating thickness for patterning a thin film semiconductor layer Chih-Yuh Yang, Minh Van Ngo 2003-07-29
6579809 In-situ gate etch process for fabrication of a narrow gate transistor structure with a high-k gate dielectric Chih-Yuh Yang 2003-06-17
6563183 Gate array with multiple dielectric properties and method for forming same William G. En, Arvind Halliyal, Minh-Ren Lin, Minh Van Ngo, Chih-Yuh Yang 2003-05-13
6559017 Method of using amorphous carbon as spacer material in a disposable spacer process David E. Brown, Philip A. Fisher, Richard J. Huang, Richard Nguyen 2003-05-06
6555439 Partial recrystallization of source/drain region before laser thermal annealing Qi Xiang, Robert B. Ogle, Eric N. Paton, Bin Yu 2003-04-29
6551888 Tuning absorption levels during laser thermal annealing Eric N. Paton, Bin Yu, Qi Xiang, Robert B. Ogle 2003-04-22
6500756 Method of forming sub-lithographic spaces between polysilicon lines Scott A. Bell, Philip A. Fisher, Richard Nguyen 2002-12-31