Issued Patents All Time
Showing 76–100 of 109 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7160815 | Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations | Michael B. Korzenski, Thomas H. Baum, Eliodor G. Ghenciu | 2007-01-09 |
| 7119418 | Supercritical fluid-assisted deposition of materials on semiconductor substrates | Thomas H. Baum, Michael B. Korzenski | 2006-10-10 |
| 7119052 | Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers | Michael B. Korzenski, Thomas H. Baum, David W. Minsek, Eliodor G. Ghenciu | 2006-10-10 |
| 7108771 | Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films | Thomas H. Baum, Alexander Borovik, Ziyun Wang, James Lin, Scott L. Battle +1 more | 2006-09-19 |
| 7094284 | Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same | Thomas H. Baum, Jeffrey F. Roeder, Bryan C. Hendrix | 2006-08-22 |
| 7084080 | Silicon source reagent compositions, and method of making and using same for microelectronic device structure | Alexander Borovik, Ziyun Wang, Thomas H. Baum, Brian L. Benac | 2006-08-01 |
| 7030168 | Supercritical fluid-assisted deposition of materials on semiconductor substrates | Thomas H. Baum | 2006-04-18 |
| 7022864 | Ethyleneoxide-silane and bridged silane precursors for forming low k films | Alexander Borovik, Thomas H. Baum, Steven M. Bilodeau, Jeffrey F. Roeder, Abigail Ebbing +1 more | 2006-04-04 |
| 7011716 | Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products | Michael B. Korzenski, Thomas H. Baum, Alexander Borovik, Eliodor G. Ghenciu | 2006-03-14 |
| 7005392 | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same | Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder | 2006-02-28 |
| 6989358 | Supercritical carbon dioxide/chemical formulation for removal of photoresists | Michael B. Korzenski, Eliodor G. Ghenciu, Thomas H. Baum | 2006-01-24 |
| 6960675 | Tantalum amide complexes for depositing tantalum-containing films, and method of making same | Tianniu Chen, Thomas H. Baum | 2005-11-01 |
| 6943139 | Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations | Michael B. Korzenski, Eliodor G. Ghenciu, Thomas H. Baum | 2005-09-13 |
| 6909839 | Delivery systems for efficient vaporization of precursor source material | Luping Wang, Thomas H. Baum | 2005-06-21 |
| 6869638 | Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same | Thomas H. Baum, Bryan C. Hendrix, Jeffrey F. Roeder | 2005-03-22 |
| 6822107 | Chemical vapor deposition precursors for deposition of copper | Thomas H. Baum, Gautam Bhandari | 2004-11-23 |
| 6767830 | Br2SbCH3 a solid source ion implant and CVD precursor | Ziyun Wang, Thomas H. Baum, Michael A. Todd, Niamh McMahon | 2004-07-27 |
| 6740586 | Vapor delivery system for solid precursors and method of using same | Luping Wang, Thomas H. Baum | 2004-05-25 |
| 6736993 | Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same | Thomas H. Baum, Bryan C. Hendrix | 2004-05-18 |
| 6735978 | Treatment of supercritical fluid utilized in semiconductor manufacturing applications | Glenn M. Tom, Michael B. Korzenski, Eliodor G. Ghenciu, Thomas H. Baum | 2004-05-18 |
| 6639080 | Pyrazolate copper complexes, and MOCVD of copper using same | Thomas H. Baum, Ziyun Wang | 2003-10-28 |
| 6623656 | Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same | Thomas H. Baum, Witold Paw, Bryan C. Hendrix, Jeffrey F. Roeder, Ziyun Wang | 2003-09-23 |
| 6602549 | Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures | Thomas H. Baum | 2003-08-05 |
| 6589329 | Composition and process for production of copper circuitry in microelectronic device structures | Thomas H. Baum | 2003-07-08 |
| 6559328 | Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronic structures | Thomas H. Baum | 2003-05-06 |