| 11538806 |
Gate-all-around integrated circuit structures having high mobility |
Roza Kotlyar, Rishabh Mehandru, Stephen M. Cea, Dax M. Crum, Tahir Ghani |
2022-12-27 |
| 11538937 |
Fin trim plug structures having an oxidation catalyst layer surrounded by a recessed dielectric material |
Leonard P. GULER, Nick Lindert, Swaminathan Sivakumar, Tahir Ghani |
2022-12-27 |
| 11527640 |
Wrap-around contact structures for semiconductor nanowires and nanoribbons |
Rishabh Mehandru, Tahir Ghani, Stephen M. Cea |
2022-12-13 |
| 11527612 |
Gate-all-around integrated circuit structures having vertically discrete source or drain structures |
Glenn A. Glass, Anand S. Murthy, Dax M. Crum, Sean T. Ma, Tahir Ghani +3 more |
2022-12-13 |
| 11521968 |
Channel structures with sub-fin dopant diffusion blocking layers |
Cory Bomberger, Anand S. Murthy, Stephen M. Cea, Anupama Bowonder, Tahir Ghani |
2022-12-06 |
| 11522048 |
Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs |
Cory Bomberger, Anand S. Murthy, Mark Bohr, Tahir Ghani |
2022-12-06 |
| 11495672 |
Increased transistor source/drain contact area using sacrificial source/drain layer |
Dax M. Crum, William Hsu, Stephen M. Cea, Tahir Ghani |
2022-11-08 |
| 11469299 |
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers |
Glenn A. Glass, Anand S. Murthy, Dax M. Crum, Patrick H. Keys, Tahir Ghani +2 more |
2022-10-11 |
| 11456357 |
Self-aligned gate edge architecture with alternate channel material |
Anupama Bowonder, William Hsu, Szuya S. Liao, Mehmet O. Baykan, Tahir Ghani |
2022-09-27 |
| 11450738 |
Source/drain regions in integrated circuit structures |
Sean T. Ma, Anand S. Murthy, Glenn A. Glass |
2022-09-20 |
| 11450739 |
Germanium-rich nanowire transistor with relaxed buffer layer |
Glenn A. Glass, Anand S. Murthy, Cory Bomberger, Tahir Ghani, Jack T. Kavalieros +3 more |
2022-09-20 |
| 11430868 |
Buried etch-stop layer to help control transistor source/drain depth |
Rishabh Mehandru, Anupama Bowonder, Anand S. Murthy, Tahir Ghani, Stephen M. Cea |
2022-08-30 |
| 11417781 |
Gate-all-around integrated circuit structures including varactors |
Ayan Kar, Saurabh Morarka, Carlos Nieva-Lozano, Kalyan C. Kolluru, Chung-Hsun Lin +2 more |
2022-08-16 |
| 11411096 |
Source electrode and drain electrode protection for nanowire transistors |
Karthik Jambunathan, Anand S. Murthy, Tahir Ghani |
2022-08-09 |
| 11404578 |
Dielectric isolation layer between a nanowire transistor and a substrate |
Bruce Beattie, Leonard P. GULER, Jun Sung Kang, William Hsu |
2022-08-02 |
| 11398474 |
Neighboring gate-all-around integrated circuit structures having disjoined epitaxial source or drain regions |
Leonard P. GULER, Tahir Ghani, Swaminathan Sivakumar |
2022-07-26 |
| 11374100 |
Source or drain structures with contact etch stop layer |
Cory Bomberger, Rishabh Mehandru, Anupama Bowonder, Anand S. Murthy, Tahir Ghani |
2022-06-28 |
| 11367796 |
Gate-all-around integrated circuit structures having asymmetric source and drain contact structures |
Mauro J. Kobrinsky, Tahir Ghani |
2022-06-21 |
| 11355608 |
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices having epitaxial source or drain structures |
Leonard P. GULER, Tahir Ghani, Swaminathan Sivakumar |
2022-06-07 |
| 11342411 |
Cavity spacer for nanowire transistors |
William Hsu, Leonard P. GULER, Souvik Chakrabarty, Jun Sung Kang, Bruce Beattie +1 more |
2022-05-24 |
| 11335807 |
Isolation schemes for gate-all-around transistor devices |
Rishabh Mehandru, Stephen M. Cea, Tahir Ghani, William Hsu |
2022-05-17 |
| 11302790 |
Fin shaping using templates and integrated circuit structures resulting therefrom |
Leonard P. GULER, Mark Armstrong, William Hsu, Tahir Ghani, Swaminathan Sivakumar |
2022-04-12 |
| 11276691 |
Gate-all-around integrated circuit structures having self-aligned source or drain undercut for varied widths |
Jun Sung Kang, Bruce Beattie, Stephen M. Cea, Tahir Ghani |
2022-03-15 |
| 11251302 |
Epitaxial oxide plug for strained transistors |
Karthik Jambunathan, Anupama Bowonder, Anand S. Murthy, Tahir Ghani |
2022-02-15 |
| 11233152 |
Self-aligned gate endcap (SAGE) architectures with gate-all-around devices |
William Hsu, Leonard P. GULER, Dax M. Crum, Tahir Ghani |
2022-01-25 |