Issued Patents 2020
Showing 51–65 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10573714 | Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2020-02-25 |
| 10566444 | Vertical fin field effect transistor with a reduced gate-to-bottom source/drain parasitic capacitance | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2020-02-18 |
| 10566445 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Wenyu Xu, Chen Zhang | 2020-02-18 |
| 10566240 | Wimpy device by selective laser annealing | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2020-02-18 |
| 10559504 | High mobility semiconductor fins on insulator | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-02-11 |
| 10559692 | Nanosheet substrate isolation scheme by lattice matched wide bandgap semiconductor | Alexander Reznicek, Jingyun Zhang, Choonghyun Lee | 2020-02-11 |
| 10559502 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-02-11 |
| 10553493 | Fabrication of a vertical transistor with self-aligned bottom source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-02-04 |
| 10553445 | Stacked nanowires | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2020-02-04 |
| 10541253 | FinFETs with various fin height | Kangguo Cheng, Terence B. Hook, Balasubramanian Pranatharthiharan | 2020-01-21 |
| 10541335 | Stress induction in 3D device channel using elastic relaxation of high stress material | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2020-01-21 |
| 10541330 | Forming stacked nanowire semiconductor device | Kangguo Cheng, Peng Xu, Chen Zhang | 2020-01-21 |
| 10535652 | Fabrication of vertical fin field effect transistors having top air spacers and a self-aligned top junction | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-01-14 |
| 10529823 | Method of manufacturing a semiconductor device having a metal gate with different lateral widths between spacers | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2020-01-07 |
| 10529713 | Fin field effect transistor devices with modified spacer and gate dielectric thicknesses | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-01-07 |