Issued Patents 2020
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10658493 | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates | Zhenxing Bi, Kangguo Cheng, Nicolas Loubet, Wenyu Xu, Chen Zhang | 2020-05-19 |
| 10658481 | Self-aligned gate cut in direct stacked vertical transport field effect transistor (VTFET) | Chen Zhang, Tenko Yamashita, Kangguo Cheng | 2020-05-19 |
| 10658461 | Nanowire with sacrificial top wire | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2020-05-19 |
| 10658387 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Zuoguang Liu | 2020-05-19 |
| 10644150 | Tunnel field-effect transistor with reduced subthreshold swing | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2020-05-05 |
| 10636895 | Vertical transport field effect transistor on silicon with defined junctions | Chen Zhang, Kangguo Cheng, Wenyu Xu | 2020-04-28 |
| 10622354 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-14 |
| 10622264 | Nanosheet devices with different types of work function metals | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-14 |
| 10622454 | Formation of a semiconductor device with RIE-free spacers | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-14 |
| 10615267 | Semiconductor device strain relaxation buffer layer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-07 |
| 10615258 | Nanosheet semiconductor structure with inner spacer formed by oxidation | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2020-04-07 |
| 10615256 | Nanosheet transistor gate structure having reduced parasitic capacitance | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-04-07 |
| 10607894 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-03-31 |
| 10607892 | Junction formation in thick-oxide and thin-oxide vertical FETs on the same chip | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-03-31 |
| 10608109 | Vertical transistor with enhanced drive current | Kangguo Cheng, Alexander Reznicek | 2020-03-31 |
| 10608083 | Non-planar field effect transistor devices with low-resistance metallic gate structures | Kangguo Cheng, Chen Zhang, Wenyu Xu | 2020-03-31 |
| 10600886 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-03-24 |
| 10593598 | Vertical FET with various gate lengths by an oxidation process | Kangguo Cheng, Chen Zhang | 2020-03-17 |
| 10593753 | Vertical field effect transistor (VFET) device with controllable top spacer | Wenyu Xu, Chen Zhang, Kangguo Cheng | 2020-03-17 |
| 10593673 | Nanosheet with single epitaxial stack forming off-set dual material channels for gate-all-around CMOS | Jingyun Zhang, Alexander Reznicek, Choonghyun Lee | 2020-03-17 |
| 10592698 | Analog-based multiple-bit chip security | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-03-17 |
| 10580709 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2020-03-03 |
| 10580855 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Sanjay C. Mehta, Chun-Chen Yeh | 2020-03-03 |
| 10580854 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Sanjay C. Mehta, Chun-Chen Yeh | 2020-03-03 |
| 10580770 | Vertical transistors with different gate lengths | Chen Zhang, Kangguo Cheng, Juntao Li | 2020-03-03 |