Issued Patents 2019
Showing 1–25 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10516028 | Transistor with asymmetric spacers | Kangguo Cheng, Heng Wu, Peng Xu | 2019-12-24 |
| 10510885 | Transistor with asymmetric source/drain overlap | Kangguo Cheng, Peng Xu, Heng Wu | 2019-12-17 |
| 10504793 | Hybrid-channel nano-sheet FETs | Kangguo Cheng, Peng Xu, Wenyu Xu | 2019-12-10 |
| 10490546 | Forming on-chip metal-insulator-semiconductor capacitor | Kangguo Cheng, Peng Xu, Chen Zhang | 2019-11-26 |
| 10483382 | Tunnel transistor | Kangguo Cheng, Peng Xu, Heng Wu | 2019-11-19 |
| 10475905 | Techniques for vertical FET gate length control | Chi-Chun Liu, Chun Wing Yeung, Robin Hsin Kuo Chao, Kristin Schmidt, Yann Mignot | 2019-11-12 |
| 10461154 | Bottom isolation for nanosheet transistors on bulk substrate | Yi Song, Chi-Chun Liu, Shogo Mochizuki | 2019-10-29 |
| 10446647 | Approach to minimization of strain loss in strained fin field effect transistors | Kangguo Cheng, Juntao Li, Peng Xu | 2019-10-15 |
| 10438855 | Dual channel FinFETs having uniform fin heights | Kangguo Cheng, Peng Xu, Jie Yang | 2019-10-08 |
| 10426400 | Optimized individual sleep patterns | Mahmoud Amin, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Krishna R. Tunga | 2019-10-01 |
| 10420502 | Optimized individual sleep patterns | Mahmoud Amin, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Krishna R. Tunga | 2019-09-24 |
| 10403716 | Trench contact resistance reduction | Kangguo Cheng, Juntao Li, Peng Xu | 2019-09-03 |
| 10395988 | Vertical FET transistor with reduced source/drain contact resistance | Kangguo Cheng, Zheng Xu, Ruqiang Bao | 2019-08-27 |
| 10388651 | Shallow trench isolation recess process flow for vertical field effect transistor fabrication | Kangguo Cheng, Bruce Miao, Xin Miao | 2019-08-20 |
| 10388571 | Fin type field effect transistors with different pitches and substantially uniform fin reveal | Kangguo Cheng, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan | 2019-08-20 |
| 10381355 | Dense vertical field effect transistor structure | Peng Xu, Kangguo Cheng, Juntao Li | 2019-08-13 |
| 10381476 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Kangguo Cheng, Juntao Li, Peng Xu | 2019-08-13 |
| 10374034 | Undercut control in isotropic wet etch processes | Chi-Chun Liu, Muthumanickam Sankarapandian, Kristin Schmidt, Ekmini Anuja De Silva, Noel Arellano +2 more | 2019-08-06 |
| 10366928 | Hybridization fin reveal for uniform fin reveal depth across different fin pitches | Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu | 2019-07-30 |
| 10361303 | Vertical transport fin field effect transistors on a substrate with varying effective gate lengths | Kangguo Cheng, Juntao Li, Peng Xu | 2019-07-23 |
| 10347731 | Transistor with asymmetric spacers | Kangguo Cheng, Heng Wu, Peng Xu | 2019-07-09 |
| 10332986 | Formation of inner spacer on nanosheet MOSFET | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-25 |
| 10332799 | Vertical silicon/silicon-germanium transistors with multiple threshold voltages | Kangguo Cheng, Juntao Li, Peng Xu | 2019-06-25 |
| 10332802 | Hybrid-channel nano-sheets FETs | Kangguo Cheng, Peng Xu, Wenyu Xu | 2019-06-25 |
| 10332880 | Vertical fin resistor devices | Kangguo Cheng, Peng Xu | 2019-06-25 |