Issued Patents 2018
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10134727 | High breakdown voltage III-N depletion mode MOS capacitors | Han Wui Then, Gerhard Schrom, Valluri Rao, Robert S. Chau | 2018-11-20 |
| 10096683 | Group III-N transistor on nanoscale template structures | Han Wui Then, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2018-10-09 |
| 10096682 | III-N devices in Si trenches | Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more | 2018-10-09 |
| 10096474 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more | 2018-10-09 |
| 10056456 | N-channel gallium nitride transistors | Han Wui Then, Marko Radosavljevic, Seung Hoon Sung, Sanaz K. Gardner, Robert S. Chau | 2018-08-21 |
| 10050015 | Multi-device flexible electronics system on a chip (SOC) process integration | Ravi Pillarisetty, Niloy Mukherjee, Brian S. Doyle, Marko Radosavljevic, Han Wui Then | 2018-08-14 |
| 10032911 | Wide band gap transistor on non-native semiconductor substrate | Han Wui Then, Robert S. Chau, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2018-07-24 |
| 9972686 | Germanium tin channel transistors | Ravi Pillarisetty, Van H. Le, Willy Rachmady, Roza Kotlyar, Marko Radosavljevic +4 more | 2018-05-15 |
| 9935191 | High electron mobility transistor fabrication process on reverse polarized substrate by layer transfer | Kimin Jun, Alejandro X. Levander, Patrick Morrow | 2018-04-03 |
| 9923087 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more | 2018-03-20 |
| 9922826 | Integrated circuit die having reduced defect group III-nitride layer and methods associated therewith | Han Wui Then, Marko Radosavljevic, Robert S. Chau, Sanaz K. Gardner, Seung Hoon Sung | 2018-03-20 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Niti Goel, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more | 2018-02-27 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Gilbert Dewey, Niti Goel +8 more | 2018-01-09 |