Issued Patents 2017
Showing 25 most recent of 61 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9852982 | Anti-fuses with reduced programming voltages | Chengwen Pei, Kangguo Cheng, Geng Wang | 2017-12-26 |
| 9853056 | Strained CMOS on strain relaxation buffer substrate | Kangguo Cheng, Balasubramanian Pranatharthiharan | 2017-12-26 |
| 9853054 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Zuoguang Liu, Xin Miao | 2017-12-26 |
| 9847246 | Multiple finFET formation with epitaxy separation | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-12-19 |
| 9847261 | Metal reflow for middle of line contacts | Junli Wang, Chih-Chao Yang | 2017-12-19 |
| 9842835 | High density nanosheet diodes | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-12-12 |
| 9837535 | Directional deposition of protection layer | Hong He, Junli Wang, Chih-Chao Yang | 2017-12-05 |
| 9837403 | Asymmetrical vertical transistor | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2017-12-05 |
| 9837405 | Fabrication of a vertical fin field effect transistor having a consistent channel width | Kangguo Cheng | 2017-12-05 |
| 9818875 | Approach to minimization of strain loss in strained fin field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2017-11-14 |
| 9812394 | Faceted structure formed by self-limiting etch | Kangguo Cheng, Ali Khakifirooz, Werner Rausch | 2017-11-07 |
| 9806084 | Anti-fuse with reduced programming voltage | Kangguo Cheng, Chengwen Pei, Geng Wang | 2017-10-31 |
| 9799749 | Vertical transport FET devices with uniform bottom spacer | Zhenxing Bi, Kangguo Cheng, Xin Miao | 2017-10-24 |
| 9799647 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-10-24 |
| 9793270 | Forming gates with varying length using sidewall image transfer | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-10-17 |
| 9768166 | Integrated LDMOS and VFET transistors | Kangguo Cheng, Geng Wang, Qintao Zhang | 2017-09-19 |
| 9768276 | Method and structure of forming FinFET electrical fuse structure | Hong He, Chih-Chao Yang, Yunpeng Yin | 2017-09-19 |
| 9768118 | Contact having self-aligned air gap spacers | Junli Wang, Chih-Chao Yang | 2017-09-19 |
| 9761717 | Stress memorization technique for strain coupling enhancement in bulk finFET device | Kangguo Cheng, Chun-Chen Yeh | 2017-09-12 |
| 9761450 | Forming a fin cut in a hardmask | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2017-09-12 |
| 9755073 | Fabrication of vertical field effect transistor structure with strained channels | Kangguo Cheng | 2017-09-05 |
| 9748245 | Multiple finFET formation with epitaxy separation | Kangguo Cheng, Peng Xu | 2017-08-29 |
| 9741577 | Metal reflow for middle of line contacts | Junli Wang, Chih-Chao Yang | 2017-08-22 |
| 9741856 | Stress retention in fins of fin field-effect transistors | Sivananda K. Kanakasabapathy, Gauri Karve, Fee Li Lie, Stuart A. Sieg, John R. Sporre | 2017-08-22 |
| 9735269 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Xin Miao | 2017-08-15 |