Issued Patents 2017
Showing 51–75 of 123 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9735175 | Integrated circuit with heterogeneous CMOS integration of strained silicon germanium and group III-V semiconductor materials and method to fabricate same | Cheng-Wei Cheng, Effendi Leobandung, Alexander Reznicek | 2017-08-15 |
| 9735160 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-08-15 |
| 9726634 | Superhydrophobic electrode and biosensing device using the same | Ali Afzali-Ardakani, Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2017-08-08 |
| 9728542 | High density programmable e-fuse co-integrated with vertical FETs | Karthik Balakrishnan, Michael A. Guillorn, Alexander Reznicek | 2017-08-08 |
| 9721970 | Gate all-around FinFET device and a method of manufacturing same | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-08-01 |
| 9722052 | Fin cut without residual fin defects | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2017-08-01 |
| 9722048 | Vertical transistors with reduced bottom electrode series resistance | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-08-01 |
| 9721851 | Silicon-germanium fin formation | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-08-01 |
| 9716173 | Compressive strain semiconductor substrates | Karthik Balakrishnan, Nicolas Loubet, Alexander Reznicek | 2017-07-25 |
| 9716145 | Strained stacked nanowire field-effect transistors (FETs) | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-07-25 |
| 9716155 | Vertical field-effect-transistors having multiple threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-07-25 |
| 9698145 | Implementation of long-channel thick-oxide devices in vertical transistor flow | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-07-04 |
| 9691854 | Semiconductor device including multiple fin heights | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-06-27 |
| 9685510 | SiGe CMOS with tensely strained NFET and compressively strained PFET | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-06-20 |
| 9685409 | Top metal contact for vertical transistor structures | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-06-20 |
| 9680018 | Method of forming high-germanium content silicon germanium alloy fins on insulator | Renee T. Mo, John A. Ott, Alexander Reznicek | 2017-06-13 |
| 9679763 | Silicon-on-insulator fin field-effect transistor device formed on a bulk substrate | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2017-06-13 |
| 9673307 | Lateral bipolar junction transistor with abrupt junction and compound buried oxide | Kevin K. Chan, Tak H. Ning, Alexander Reznicek | 2017-06-06 |
| 9666493 | Semiconductor device structure with 110-PFET and 111-NFET curent flow direction | Ali Khakifirooz, Shogo Mochizuki, Alexander Reznicek | 2017-05-30 |
| 9666669 | Superlattice lateral bipolar junction transistor | Karthik Balakrishnan, Stephen W. Bedell, Bahman Hekmatshoartabari, Alexander Reznicek | 2017-05-30 |
| 9666489 | Stacked nanowire semiconductor device | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-30 |
| 9659829 | Hybrid orientation vertically stacked III-V and Ge gate-all-around CMOS | Karthik Balakrishnan, Sanghoon Lee, Alexander Reznicek | 2017-05-23 |
| 9660059 | Fin replacement in a field-effect transistor | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2017-05-23 |
| 9660032 | Method and apparatus providing improved thermal conductivity of strain relaxed buffer | Karthik Balakrishnan, Kangguo Cheng, Alexander Reznicek | 2017-05-23 |
| 9659963 | Contact formation to 3D monolithic stacked FinFETs | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2017-05-23 |