Issued Patents 2016
Showing 25 most recent of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9530698 | Method and structure for forming FinFET CMOS with dual doped STI regions | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2016-12-27 |
| 9524882 | Contact structure and extension formation for III-V nFET | Alexander Reznicek | 2016-12-20 |
| 9525048 | Symmetrical extension junction formation with low-k spacer and dual epitaxial process in finFET device | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2016-12-20 |
| 9520394 | Contact structure and extension formation for III-V nFET | Alexander Reznicek | 2016-12-13 |
| 9514998 | Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes | Huiming Bu, Tenko Yamashita | 2016-12-06 |
| 9508825 | Method and structure for forming gate contact above active area with trench silicide | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2016-11-29 |
| 9508725 | Trench to trench fin short mitigation | Alexander Reznicek | 2016-11-29 |
| 9508818 | Method and structure for forming gate contact above active area with trench silicide | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2016-11-29 |
| 9508600 | Methods for contact formation for 10 nanometers and beyond with minimal mask counts | — | 2016-11-29 |
| 9502313 | Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes | Huiming Bu, Tenko Yamashita | 2016-11-22 |
| 9502523 | Nanowire semiconductor device including lateral-etch barrier region | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2016-11-22 |
| 9496356 | Under-spacer doping in fin-based semiconductor devices | Kangguo Cheng, Ali Khakifirooz, Charles W. Koburger, III | 2016-11-15 |
| 9496225 | Recessed metal liner contact with copper fill | Praneet Adusumilli, Huiming Bu, Zuoguang Liu | 2016-11-15 |
| 9490252 | MIM capacitor formation in RMG module | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2016-11-08 |
| 9490253 | Gate planarity for finFET using dummy polish stop | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2016-11-08 |
| 9484264 | Field effect transistor contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2016-11-01 |
| 9484348 | Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETs | Kangguo Cheng, Ali Khakifirooz | 2016-11-01 |
| 9484262 | Stressed channel bulk fin field effect transistor | Akira Hokazono, Hiroshi Itokawa, Tenko Yamashita, Chun-Chen Yeh | 2016-11-01 |
| 9472408 | Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress | Takashi Ando, Johnathan E. Faltermeier, Hemanth Jagannathan, Tenko Yamashita | 2016-10-18 |
| 9466602 | Embedded dynamic random access memory field effect transistor device | Shogo Mochizuki, Alexander Reznicek, Dominic J. Schepis | 2016-10-11 |
| 9461052 | Embedded dynamic random access memory field effect transistor device | Shogo Mochizuki, Alexander Reznicek, Dominic J. Schepis | 2016-10-04 |
| 9455323 | Under-spacer doping in fin-based semiconductor devices | Kangguo Cheng, Ali Khakifirooz, Charles W. Koburger, III | 2016-09-27 |
| 9455317 | Nanowire semiconductor device including lateral-etch barrier region | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2016-09-27 |
| 9449921 | Voidless contact metal structures | Nicolas L. Breil, Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2016-09-20 |
| 9443848 | Methods for contact formation for 10 nanometers and beyond with minimal mask counts | — | 2016-09-13 |