Issued Patents 2016
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9524986 | Trapping dislocations in high-mobility fins below isolation layer | Michael P. Chudzik, Ramachandra Divakaruni, Arvind Kumar, Unoh Kwon | 2016-12-20 |
| 9496341 | Silicon germanium fin | Kangguo Cheng, Shogo Mochizuki | 2016-11-15 |
| 9466616 | Uniform junction formation in FinFETs | Eric C. Harley, Yue Ke, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek | 2016-10-11 |
| 9443940 | Defect reduction with rotated double aspect ratio trapping | Keith E. Fogel, Pranita Kerber, Alexander Reznicek | 2016-09-13 |
| 9412842 | Method for fabricating semiconductor device | Jin-Bum Kim, Kyung-Bum Koo, Taek-Soo Jeon, Tae-Ho Cha, Henry K. Utomo | 2016-08-09 |
| 9412843 | Method for embedded diamond-shaped stress element | Eric C. Harley, Jin Z. Wallner, Thomas A. Wallner | 2016-08-09 |
| 9349864 | Methods for selectively forming a layer of increased dopant concentration | Timothy J. McArdle, Churamani Gaire | 2016-05-24 |
| 9318608 | Uniform junction formation in FinFETs | Eric C. Harley, Yue Ke, Timothy J. McArdle, Shogo Mochizuki, Alexander Reznicek | 2016-04-19 |
| 9312364 | finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth | Eric C. Harley, Yue Ke, Rishikesh Krishnan, Keith H. Tabakman, Henry K. Utomo | 2016-04-12 |
| 9293593 | Self aligned device with enhanced stress and methods of manufacture | Viorel Ontalus, Keith H. Tabakman | 2016-03-22 |
| 9287399 | Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels | Bhupesh Chandra, Paul Chang, Gregory G. Freeman, Dechao Guo, Arvind Kumar +6 more | 2016-03-15 |
| 9287264 | Epitaxially grown silicon germanium channel FinFET with silicon underlayer | Kangguo Cheng, Eric C. Harley, Gauri Karve, Yue Ke, Derrick Liu +4 more | 2016-03-15 |
| 9236397 | FinFET device containing a composite spacer structure | Jinghong Li, Sanjay C. Mehta, Alexander Reznicek, Dominic J. Schepis | 2016-01-12 |
| 9236477 | Graphene transistor with a sublithographic channel width | Jack O. Chu, Christos D. Dimitrakopoulos, Eric C. Harley, Timothy J. McArdle, Matthew W. Stoker | 2016-01-12 |