Issued Patents 2003
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6670274 | Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure | Chi-Wen Liu | 2003-12-30 |
| 6660638 | CMP process leaving no residual oxide layer or slurry particles | Shih-Chi Lin, Yi-Lung Cheng, Chi-Wen Liu, Ming-Hua Yoo, Wen-Kung Cheng +1 more | 2003-12-09 |
| 6645825 | Planarization of shallow trench isolation (STI) | Chin Kun Lan, Ting-Chun Wang, Tong-Hua Kuan | 2003-11-11 |
| 6626741 | Method for improving thickness uniformity on a semiconductor wafer during chemical mechanical polishing | Ting-Chun Wang, Kei-Wei Chen, Shih-Tzung Chang, Yu-Ku Lin | 2003-09-30 |
| 6586347 | Method and structure to improve the reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and metal layers in semiconductor integrated circuits | Chung-Shi Liu, Hui Wang, Szu-An Wu, Chun-Ching Tsan, Tong-Hua Kuan | 2003-07-01 |
| 6585826 | Semiconductor wafer cleaning method to remove residual contamination including metal nitride particles | Yali Tai, Shih-Chi Lin, Wen-Long Lee, Francis Wang, Szu-An Wu +1 more | 2003-07-01 |
| 6558228 | Method of unloading substrates in chemical-mechanical polishing apparatus | Wen-Kung Cheng, Hung-Ju Chien, Jin C J Chen | 2003-05-06 |
| 6531382 | Use of a capping layer to reduce particle evolution during sputter pre-clean procedures | Tao Cheng, Wen-Hsin Huang, Jiun-Pyng You, Lin-June Wu, Shih-Tzung Chang +4 more | 2003-03-11 |
| 6514673 | Rule to determine CMP polish time | Hway-Chi Lin, Yu-Ku Lin, Wen-Pin Chang | 2003-02-04 |