Issued Patents All Time
Showing 51–75 of 97 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9064694 | Nitridation of atomic layer deposited high-k dielectrics using trisilylamine | Steven P. Consiglio, Christian Dussarrat, Vincent M. Omarjee, Venkat Pallem, Glenn Kuchenbeiser | 2015-06-23 |
| 9012316 | Method for forming ultra-shallow boron doping regions by solid phase diffusion | — | 2015-04-21 |
| 8962078 | Method for depositing dielectric films | — | 2015-02-24 |
| 8877620 | Method for forming ultra-shallow doping regions by solid phase diffusion | — | 2014-11-04 |
| 8865581 | Hybrid gate last integration scheme for multi-layer high-k gate stacks | — | 2014-10-21 |
| 8865538 | Method of integrating buried threshold voltage adjustment layers for CMOS processing | — | 2014-10-21 |
| 8722548 | Structures and techniques for atomic layer deposition | Shintaro Aoyama, Steven P. Consiglio, Marinus Hopstaken, Hemanth Jagannathan, Paul C. Jamison +4 more | 2014-05-13 |
| 8633118 | Method of forming thin metal and semi-metal layers by thermal remote oxygen scavenging | — | 2014-01-21 |
| 8580664 | Method for forming ultra-shallow boron doping regions by solid phase diffusion | — | 2013-11-12 |
| 8569158 | Method for forming ultra-shallow doping regions by solid phase diffusion | — | 2013-10-29 |
| 8481341 | Epitaxial film growth in retrograde wells for semiconductor devices | — | 2013-07-09 |
| 8440520 | Diffused cap layers for modifying high-k gate dielectrics and interface layers | — | 2013-05-14 |
| 8334183 | Semiconductor device containing a buried threshold voltage adjustment layer and method of forming | Gerrit J. Leusink | 2012-12-18 |
| 8313994 | Method for forming a high-K gate stack with reduced effective oxide thickness | — | 2012-11-20 |
| 8178446 | Strained metal nitride films and method of forming | — | 2012-05-15 |
| 8119540 | Method of forming a stressed passivation film using a microwave-assisted oxidation process | — | 2012-02-21 |
| 8097300 | Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition | — | 2012-01-17 |
| 8012442 | Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition | — | 2011-09-06 |
| 8003503 | Method of integrating stress into a gate stack | — | 2011-08-23 |
| 7964515 | Method of forming high-dielectric constant films for semiconductor devices | Cory Wajda | 2011-06-21 |
| 7939455 | Method for forming strained silicon nitride films and a device containing such films | — | 2011-05-10 |
| 7833913 | Method of forming crystallographically stabilized doped hafnium zirconium based films | — | 2010-11-16 |
| 7816737 | Semiconductor device with gate dielectric containing mixed rare earth elements | — | 2010-10-19 |
| 7807586 | Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process | — | 2010-10-05 |
| 7790628 | Method of forming high dielectric constant films using a plurality of oxidation sources | Lisa F. Edge | 2010-09-07 |