SS

Scott R. Summerfelt

TI Texas Instruments: 196 patents #8 of 12,488Top 1%
AT Agilent Technologies: 14 patents #94 of 3,411Top 3%
AC Advanced Technology & Materials Co.: 4 patents #103 of 410Top 30%
Caltech: 1 patents #2,143 of 4,321Top 50%
RTX (Raytheon): 1 patents #8,248 of 15,912Top 55%
📍 Garland, TX: #1 of 1,186 inventorsTop 1%
🗺 Texas: #91 of 125,132 inventorsTop 1%
Overall (All Time): #3,309 of 4,157,543Top 1%
201
Patents All Time

Issued Patents All Time

Showing 101–125 of 201 patents

Patent #TitleCo-InventorsDate
6709875 Contamination control for embedded ferroelectric device fabrication processes Stephen Roy Gilbert, Trace Hurd, Laura Wills Mirkarimi, Luigi Colombo 2004-03-23
6692976 Post-etch cleaning treatment Laura Wills Mirkarimi, Stephen Roy Gilbert, Guoqiang Xing, Tomoyuki Sakoda, Ted S. Moise 2004-02-17
6686236 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing Sanjeev Aggarwal, Stephen Roy Gilbert 2004-02-03
6686210 Methods for controlling the crystallographic texture of thin films with anisotropic ferroelectric polarization or permittivity Stephen Roy Gilbert, Theodore S. Moise 2004-02-03
6667896 Grouped plate line drive architecture and method Juergen T. Rickes, Hugh P. McAdams, James W. Grace, Ralph H. Lanham 2003-12-23
6660612 Design to prevent tungsten oxidation at contact alignment in FeRAM Yung Shan Chang, Theodore S. Moise 2003-12-09
6656748 FeRAM capacitor post stack etch clean/repair Lindsey Hall 2003-12-02
6635498 Method of patterning a FeRAM capacitor with a sidewall during bottom electrode etch Guoqiang Xing, Luigi Colombo, Sanjeev Aggarwal, Theodore S. Moise 2003-10-21
6635497 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing Sanjeev Aggarwal, Stephen Roy Gilbert 2003-10-21
6635528 Method of planarizing a conductive plug situated under a ferroelectric capacitor Stephen Roy Gilbert, Luigi Colombo 2003-10-21
6596547 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing Sanjeev Aggarwal, Stephen Roy Gilbert 2003-07-22
6593638 Lightly donor doped electrodes for high-dielectric-constant materials Howard R. Beratan, Bruce E. Gnade 2003-07-15
6576482 One step deposition process for the top electrode and hardmask in a ferroelectric memory cell Sanjeev Aggarwal, Stevan G. Hunter 2003-06-10
6576546 Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications Stephen Roy Gilbert, Luigi Colombo 2003-06-10
6555431 Method for forming integrated circuit capacitor and memory Guoqiang Xing, Rajesh Khamankar 2003-04-29
6548343 Method of fabricating a ferroelectric memory cell Theodore S. Moise, Guoqiang Xing, Luigi Colombo, Tomoyuki Sakoda, Stephen Roy Gilbert +5 more 2003-04-15
6534809 Hardmask designs for dry etching FeRAM capacitor stacks Theodore S. Moise, Stephen Roy Gilbert, Guoqiang Xing, Luigi Colombo 2003-03-18
6528386 Protection of tungsten alignment mark for FeRAM processing Luigi Colombo, Stephen Roy Gilbert, Theodore S. Moise, Sanjeev Aggarwal 2003-03-04
6528328 Methods of preventing reduction of irox during PZT formation by metalorganic chemical vapor deposition or other processing Sanjeev Aggarwal, Stephen Roy Gilbert 2003-03-04
6500678 Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing Sanjeev Aggarwal, Stephen Roy Gilbert 2002-12-31
6485988 Hydrogen-free contact etch for ferroelectric capacitor formation Shawming Ma, Guoqiang Xing, Rahim Kavari, Tomoyuki Sakoda 2002-11-26
6486520 Structure and method for a large-permittivity gate using a germanium layer Yasutoshi Okuno 2002-11-26
6462931 High-dielectric constant capacitor and memory Shaoping Tang, John Mark Anthony 2002-10-08
6444542 Integrated circuit and method Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin Gaynor, Stephen Roy Gilbert +2 more 2002-09-03
6441415 Ferroelectric and paraelectric thin film devices using dopants which eliminate ferroelectricity Theodore S. Moise, Stephen Roy Gilbert, Charles D. E. Lakeman, Stacey A. Yamanaka 2002-08-27