SS

Scott R. Summerfelt

TI Texas Instruments: 196 patents #8 of 12,488Top 1%
AT Agilent Technologies: 14 patents #94 of 3,411Top 3%
AC Advanced Technology & Materials Co.: 4 patents #103 of 410Top 30%
Caltech: 1 patents #2,143 of 4,321Top 50%
RTX (Raytheon): 1 patents #8,248 of 15,912Top 55%
📍 Garland, TX: #1 of 1,186 inventorsTop 1%
🗺 Texas: #91 of 125,132 inventorsTop 1%
Overall (All Time): #3,309 of 4,157,543Top 1%
201
Patents All Time

Issued Patents All Time

Showing 126–150 of 201 patents

Patent #TitleCo-InventorsDate
6432473 PB substituted perovskites for thin films dielectrics Howard R. Beratan, Bernard M. Kulwicki 2002-08-13
6362068 Electrode interface for high-dielectric-constant materials Howard R. Beratan 2002-03-26
6362499 Ferroelectric transistors using thin film semiconductor gate electrodes Theodore S. Moise 2002-03-26
6319542 Lightly donor doped electrodes for high-dielectric-constant materials Howard R. Beratan, Bruce E. Gnade 2001-11-20
6320213 Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same Peter S. Kirlin, Paul McIntryre 2001-11-20
6291282 Method of forming dual metal gate structures or CMOS devices Glen Wilk 2001-09-18
6287903 Structure and method for a large-permittivity dielectric using a germanium layer Yasutoshi Okuno 2001-09-11
6275370 Electrical connections to dielectric materials Bruce E. Gnade 2001-08-14
6225655 Ferroelectric transistors using thin film semiconductor gate electrodes Theodore S. Moise 2001-05-01
6215650 Electrical connections to dielectric materials Bruce E. Gnade 2001-04-10
6211034 Metal patterning with adhesive hardmask layer Mark Visokay, Luigi Colombo, Paul McIntyre 2001-04-03
6211035 Integrated circuit and method Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin Gaynor, Stephen Roy Gilbert +2 more 2001-04-03
6204069 Lightly donor doped electrodes for high-dielectric-constant materials Howard R. Beratan, Bruce E. Gnade 2001-03-20
6184074 Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS Darius Crenshaw 2001-02-06
6180446 Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMS using disposable-oxide processing Darius Crenshaw 2001-01-30
6177351 Method and structure for etching a thin film perovskite layer Howard R. Beratan, James F. Belcher 2001-01-23
6171898 Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K-DRAMS using a disposable-oxide processing Darius Crenshaw 2001-01-09
6153490 Method for forming integrated circuit capacitor and memory Guoqiang Xing, Rajesh Khamankar 2000-11-28
6117689 Stable high-dielectric-constant material electrode and method 2000-09-12
6100200 Sputtering process for the conformal deposition of a metallization or insulating layer Peter C. Van Buskirk, Michael W. Russell, Daniel J. Vestyck, Theodore S. Moise 2000-08-08
6087661 Thermal isolation of monolithic thermal detector Robert A. Owen, Charles M. Hanson, Steven N. Frank, Howard R. Beratan 2000-07-11
6083812 Heteroepitaxy by large surface steps 2000-07-04
6033919 Method of forming sidewall capacitance structure Bruce E. Gnade, Peter S. Kirlin 2000-03-07
5998225 Method of fabricating an oxygen-stable layer/diffusion barrier/poly bottom electrode structure for high-K DRAMs using disposable-oxide processing Darius Crenshaw 1999-12-07
5972722 Adhesion promoting sacrificial etch stop layer in advanced capacitor structures Mark Visokay, Luigi Colombo, Paul McIntyre 1999-10-26