Issued Patents All Time
Showing 26–50 of 296 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11640971 | Deep trench capacitor including self-aligned plate contact via structures and methods of forming the same | Ming Chyi Liu, Yu-Hsing Chang | 2023-05-02 |
| 11581484 | Semiconductor structure, electrode structure and method of forming the same | Chung-Yen Chou, Fu-Ting Sung, Yao-Wen Chang | 2023-02-14 |
| 11575052 | Semiconductor device and method of forming the same | Yu-Hsing Chang, Chern-Yow Hsu | 2023-02-07 |
| 11569296 | Semiconductor structure | Chern-Yow Hsu, Yuan-Tai Tseng | 2023-01-31 |
| 11515473 | Semiconductor device including a magnetic tunneling junction (MTJ) device | Harry-Hak-Lay Chuang, Chern-Yow Hsu, Kuei-Hung Shen | 2022-11-29 |
| 11495743 | Non-volatile memory device and manufacturing technology | Chern-Yow Hsu, Chung-Chiang Min | 2022-11-08 |
| 11434129 | Semiconductor structure and method for fabricating the same | Chun-Wen Cheng, Yi-Chuan Teng, Cheng-Yu Hsieh, Lee-Chuan Tseng, Shih-Wei Lin | 2022-09-06 |
| 11430956 | RRAM cell structure with conductive etch-stop layer | Ming Chyi Liu, Yuan-Tai Tseng, Chern-Yow Hsu, Chia-Shiung Tsai | 2022-08-30 |
| 11374000 | Trench capacitor with lateral protrusion structure | Ru-Liang Lee, Ming Chyi Liu | 2022-06-28 |
| 11367832 | Method of making magnetoresistive random access memory device | Chern-Yow Hsu, Chia-Shiung Tsai | 2022-06-21 |
| 11362265 | Semiconductor structure and method of manufacturing the same | Fu-Ting Sung, Chung-Chiang Min, Yuan-Tai Tseng, Chern-Yow Hsu | 2022-06-14 |
| 11361971 | High aspect ratio Bosch deep etch | Yu-Hsing Chang, Ming Chyi Liu | 2022-06-14 |
| 11348935 | Memory devices and method of fabricating same | Chang-Ming Wu, Wei-Cheng Wu, Harry-Hak-Lay Chuang, Chia-Shiung Tsai | 2022-05-31 |
| 11296100 | Cell boundary structure for embedded memory | Ming Chyi Liu, Sheng-Chieh Chen, Yu-Hsing Chang | 2022-04-05 |
| 11289648 | Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls | Yuan-Tai Tseng | 2022-03-29 |
| 11289539 | Self-aligned dielectric spacer for magnetic tunnel junction patterning and methods for forming the same | Min-Yung Ko | 2022-03-29 |
| 11289651 | Memory device having via landing protection | Tsung-Hsueh Yang, Yuan-Tai Tseng | 2022-03-29 |
| 11258007 | Reversed stack MTJ | Wei-Hang Huang, Fu-Ting Sung, Chern-Yow Hsu, Chia-Shiung Tsai | 2022-02-22 |
| 11233145 | Manufacturing method of semiconductor structure | Sheng-De Liu, Chung-Yen Chou | 2022-01-25 |
| 11227993 | Device with composite spacer and method for manufacturing the same | Fu-Ting Sung, Chern-Yow Hsu | 2022-01-18 |
| 11222896 | Semiconductor arrangement with capacitor and method of fabricating the same | Chern-Yow Hsu, Chen-Jong Wang, Chia-Shiung Tsai, Ming Chyi Liu, Xiaomeng Chen | 2022-01-11 |
| 11217596 | Flash memory with improved gate structure and a method of creating the same | Sheng-Chieh Chen, Ming Chyi Liu | 2022-01-04 |
| 11189789 | Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls | Yuan-Tai Tseng | 2021-11-30 |
| 11189787 | Method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element | Yi Jen Tsai | 2021-11-30 |
| 11158546 | Semiconductor arrangement and method of forming | Harry-Hak-Lay Chuang, Wei-Cheng Wu, Chin-Yi Huang | 2021-10-26 |