Issued Patents All Time
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6254933 | Method of chemical vapor deposition | Hitoshi Habuka, Masanori Mayuzumi, Naoto Tate | 2001-07-03 |
| 6048793 | Method and apparatus for thin film growth | Hitoshi Habuka, Masanori Mayuzumi, Naoto Tate | 2000-04-11 |
| 6008128 | Method for smoothing surface of silicon single crystal substrate | Hitoshi Habuka, Toru Otsuka | 1999-12-28 |
| 5998281 | SOI wafer and method for the preparation thereof | Hiroji Aga, Kiyoshi Mitani | 1999-12-07 |
| 5938840 | Method for vapor phase growth | Hitoshi Habuka, Masanori Mayuzumi, Naoto Tate | 1999-08-17 |
| 5804494 | Method of fabricating bonded wafer | Kiyoshi Mitani, Kazushi Nakazawa | 1998-09-08 |
| 5759426 | Heat treatment jig for semiconductor wafers and a method for treating a surface of the same | Norihiro Kobayashi, Kazuo Mamada, Yuichi Matsumoto, Satoshi Oka | 1998-06-02 |
| 5755878 | Method for vapor phase growth | Hitoshi Habuka, Masanori Mayuzumi, Naoto Tate | 1998-05-26 |
| 5749974 | Method of chemical vapor deposition and reactor therefor | Hitoshi Habuka, Masanori Mayuzumi, Naoto Tate | 1998-05-12 |
| 5718762 | Method for vapor-phase growth | Hitoshi Habuka, Naoto Tate, Masanori Mayuzumi, Hitoshi Tsunoda | 1998-02-17 |
| 5696034 | Method for producing semiconductor substrate | Isao Moroga, Isao Shirai, Youichi Kumaki, Akio Kasahara | 1997-12-09 |
| 5650353 | Method for production of SOI substrate | Katsuo Yoshizawa, Tsutomu Sato, Kiyoshi Mitani | 1997-07-22 |
| 5538904 | Method of estimating quantity of boron at bonding interface in bonded wafer | Kiyoshi Mitani, Kazushi Nakazawa | 1996-07-23 |
| 5514235 | Method of making bonded wafers | Kiyoshi Mitani | 1996-05-07 |
| 5478408 | SOI substrate and manufacturing method therefor | Kiyoshi Mitani, Kazushi Nakazawa | 1995-12-26 |
| 5427052 | Method and apparatus for production of extremely thin SOI film substrate | Yutaka Ohta, Masatake Nakano, Takao Abe | 1995-06-27 |
| 5393370 | Method of making a SOI film having a more uniform thickness in a SOI substrate | Yutaka Ohta, Isao Moroga | 1995-02-28 |
| 5376215 | Apparatus for production of extremely thin SOI film substrate | Yutaka Ohta, Masatake Nakano, Takao Abe | 1994-12-27 |
| 5336634 | Dielectrically isolated substrate and a process for producing the same | Makoto Sato, Yutaka Ohta, Mitsuru Sugita, Konomu Ohki | 1994-08-09 |
| 5240883 | Method of fabricating SOI substrate with uniform thin silicon film | Takao Abe, Akio Kanai, Konomu Ohki, Masatake Nakano | 1993-08-31 |
| 5223080 | Method for controlling thickness of single crystal thin-film layer in SOI substrate | Yutaka Ohta, Takao Abe, Yasuaki Nakazato | 1993-06-29 |
| 5183783 | Method for production of dielectric-separation substrate | Yutaka Ohta, Konomu Ohki | 1993-02-02 |
| 5171708 | Method of boron diffusion into semiconductor wafers having reduced stacking faults | Shoichi Fujiya, Isao Moroga, Masaru Shinomiya | 1992-12-15 |
| 5124274 | Method for production of dielectric-separation substrate | Konomu Ohki, Yutaka Ohta | 1992-06-23 |