Issued Patents All Time
Showing 1–25 of 30 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11248306 | Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipment | Tsuyoshi Ohtsuki | 2022-02-15 |
| 7326658 | Method for preparing nitrogen-doped annealed wafer and nitrogen-doped and annealed wafer | Makoto Iida | 2008-02-05 |
| 7189293 | Method of producing annealed wafer and annealed wafer | Norihiro Kobayashi, Takatoshi Nagoya, Wei Qu, Hiroshi Takeno, Ken Aihara | 2007-03-13 |
| 7153785 | Method of producing annealed wafer and annealed wafer | Norihiro Kobayashi, Takatoshi Nagoya, Wei Qu | 2006-12-26 |
| 7147711 | Method of producing silicon wafer and silicon wafer | Wei Qu, Norihiro Kobayashi | 2006-12-12 |
| 7011717 | Method for heat treatment of silicon wafers and silicon wafer | Norihiro Kobayashi, Shoji Akiyama, Yuuichi Matsumoto | 2006-03-14 |
| 6878645 | Method for manufacturing silicon wafer | Norihiro Kobayashi, Shoji Akiyama, Masaru Shinomiya, Yuichi Matsumoto | 2005-04-12 |
| 6841450 | Annealed wafer manufacturing method and annealed wafer | Norihiro Kobayashi, Takatoshi Nagoya, Wei Qu, Makoto Iida | 2005-01-11 |
| 6809015 | Method for heat treatment of silicon wafers and silicon wafer | Norihiro Kobayashi, Shoji Akiyama, Yuuichi Matsumoto | 2004-10-26 |
| 6805743 | Method for manufacturing single-crystal-silicon wafers | Norihiro Kobayashi, Takatoshi Nagoya | 2004-10-19 |
| 6802899 | Silicon single crystal wafer and manufacturing process therefor | — | 2004-10-12 |
| 6680260 | Method of producing a bonded wafer and the bonded wafer | Shoji Akiyama | 2004-01-20 |
| 6670261 | Production method for annealed wafer | Shoji Akiyama, Norihiro Kobayashi, Takatoshi Nagoya | 2003-12-30 |
| 6626994 | Silicon wafer for epitaxial wafer, epitaxial wafer, and method of manufacture thereof | Akihiro Kimura, Hideki Sato, Ryuji Kono, Masahiro Kato | 2003-09-30 |
| 6599603 | Silicon wafer | Masahiro Kato, Osamu Imai, Akihiro Kimura, Tomosuke Yoshida | 2003-07-29 |
| 6573159 | Method for thermally annealing silicon wafer and silicon wafer | Norihiro Kobayashi, Shoji Akiyama, Yuuichi Matsumoto | 2003-06-03 |
| 6492682 | Method of producing a bonded wafer and the bonded wafer | Shoji Akiyama | 2002-12-10 |
| 6478883 | Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them | Ken Aihara, Katsuhiko Miki, Hiroshi Takeno, Yoshinori Hayamizu | 2002-11-12 |
| 6413310 | Method for producing silicon single crystal wafer and silicon single crystal wafer | Norihiro Kobayashi, Shoji Akiyama, Masaru Shinomiya | 2002-07-02 |
| 6299982 | Silicon single crystal wafer and method for producing silicon single crystal wafer | Akihiro Kimura, Katsuhiko Miki, Makoto Iida | 2001-10-09 |
| 6291874 | Method for producing silicon single crystal wafer for particle monitoring and silicon single crystal wafer for particle monitoring | Katsuhiko Miki | 2001-09-18 |
| 6261361 | Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it | Makoto Iida, Masanori Kimura, Shozo Muraoka | 2001-07-17 |
| 6224668 | Method for producing SOI substrate and SOI substrate | — | 2001-05-01 |
| 6197109 | Method for producing low defect silicon single crystal doped with nitrogen | Makoto Iida, Wataru Kusaki, Masanori Kimura, Shozo Muraoka | 2001-03-06 |
| 6191009 | Method for producing silicon single crystal wafer and silicon single crystal wafer | Makoto Iida, Norihiro Kobayashi | 2001-02-20 |