Issued Patents All Time
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7713851 | Method of manufacturing silicon epitaxial wafer | Fumitaka Kume, Tomosuke Yoshida, Ryoji Hoshi, Satoshi Tobe, Naohisa Toda +1 more | 2010-05-11 |
| 7189293 | Method of producing annealed wafer and annealed wafer | Norihiro Kobayashi, Masaro Tamatsuka, Takatoshi Nagoya, Wei Qu, Hiroshi Takeno | 2007-03-13 |
| 7078357 | Method for manufacturing silicon wafer and silicon wafer | Satoshi Tobe | 2006-07-18 |
| 6548035 | Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same | Akihiro Kimura, Makoto Iida, Yoshinori Hayamizu, Masanori Kimura | 2003-04-15 |
| 6544656 | Production method for silicon wafer and silicon wafer | Takao Abe, Shoji Akiyama, Tetsuya Igarashi, Weifeng QU, Yoshinori Hayamizu +1 more | 2003-04-08 |
| 6479312 | Gallium phosphide luminescent device | Masato Yamada, Susumu Higuchi, Kousei Yumoto, Makoto Kawasaki | 2002-11-12 |
| 6478883 | Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them | Masaro Tamatsuka, Katsuhiko Miki, Hiroshi Takeno, Yoshinori Hayamizu | 2002-11-12 |
| 6264906 | Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate | Hiroshi Takeno | 2001-07-24 |
| 6206961 | Method of determining oxygen precipitation behavior in a silicon monocrystal | Hiroshi Takeno | 2001-03-27 |
| 6162708 | Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer | Masaro Tamatsuka, Tomosuke Yoshida | 2000-12-19 |
| 6143071 | Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate | Hiroshi Takeno | 2000-11-07 |
| 5533387 | Method of evaluating silicon wafers | Yutaka Kitagawara, Takao Takenaka | 1996-07-09 |