Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11898078 | Semiconductor phosphor | Kenji Sakai, Masato Yamada, Masanobu Takahashi, Junya ISHIZAKI | 2024-02-13 |
| 6479312 | Gallium phosphide luminescent device | Masato Yamada, Kousei Yumoto, Makoto Kawasaki, Ken Aihara | 2002-11-12 |
| 6433365 | Epitaxial wafer and light emitting diode | Toru Takahashi | 2002-08-13 |
| 5985023 | Method for growth of a nitrogen-doped gallium phosphide epitaxial layer | Masato Yamada, Munehisa Yanagisawa | 1999-11-16 |
| 5851850 | Method for fabricating a gap type semiconductor substrate of red light emitting devices | Munehisa Yanagisawa, Yuuki Tamura, Akio Nakamura, Toshio Otaki | 1998-12-22 |
| 5759267 | Liquid phase epitaxial | Munehisa Yanagisawa, Yuji Yoshida, Masahiko Saito | 1998-06-02 |
| 5731209 | Method for the determination of nitrogen concentration in compound semiconductor | Masato Yamada, Munehisa Yanagisawa | 1998-03-24 |
| 5643827 | GaP light emitting substrate and a method of manufacturing it | Toshio Ootaki, Akio Nakamura, Yuuki Tamura, Munehisa Yanagisawa | 1997-07-01 |
| 5603761 | Liquid phase epitaxial growth method for carrying out the same | Munehisa Yanagisawa, Yuji Yoshida, Masahiko Saito | 1997-02-18 |
| 5514881 | Gap light emitting device having a low carbon content in the substrate | Munehisa Yanagisawa, Yu Tamura, Akio Nakamura, Toshio Otaki | 1996-05-07 |
| 5406093 | Gap pure green light emitting element substrate | Masahisa Endo, Akio Nakamura | 1995-04-11 |
| 5349208 | GaP light emitting element substrate with oxygen doped buffer | Munehisa Yanagisawa, Yuuki Tamura | 1994-09-20 |
| 5234534 | Liquid-phase growth process of compound semiconductor | Munehisa Yanagisawa, Akio Nakamura, Toshio Otaki | 1993-08-10 |
| 4648136 | Human body protector | — | 1987-03-10 |