Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5985023 | Method for growth of a nitrogen-doped gallium phosphide epitaxial layer | Susumu Higuchi, Masato Yamada | 1999-11-16 |
| 5851850 | Method for fabricating a gap type semiconductor substrate of red light emitting devices | Susumu Higuchi, Yuuki Tamura, Akio Nakamura, Toshio Otaki | 1998-12-22 |
| 5759267 | Liquid phase epitaxial | Susumu Higuchi, Yuji Yoshida, Masahiko Saito | 1998-06-02 |
| 5731209 | Method for the determination of nitrogen concentration in compound semiconductor | Masato Yamada, Susumu Higuchi | 1998-03-24 |
| 5643827 | GaP light emitting substrate and a method of manufacturing it | Toshio Ootaki, Akio Nakamura, Yuuki Tamura, Susumu Higuchi | 1997-07-01 |
| 5636023 | Apparatus for measuring surface shape | — | 1997-06-03 |
| 5603761 | Liquid phase epitaxial growth method for carrying out the same | Susumu Higuchi, Yuji Yoshida, Masahiko Saito | 1997-02-18 |
| 5571321 | Method for producing a gallium phosphide epitaxial wafer | Yuuki Tamura, Susumu Arisaka, Hidetoshi Matsumoto | 1996-11-05 |
| 5514881 | Gap light emitting device having a low carbon content in the substrate | Susumu Higuchi, Yu Tamura, Akio Nakamura, Toshio Otaki | 1996-05-07 |
| 5500390 | Method for control of Si concentration in gallium phosphide single crystal layer by liquid phase epitaxial growth technique | Yuki Tamura, Norihide Kokubu | 1996-03-19 |
| 5407858 | Method of making gap red light emitting element substrate by LPE | Yuuki Tamura, Susumu Arisaka, Hidetoshi Matsumoto | 1995-04-18 |
| 5349208 | GaP light emitting element substrate with oxygen doped buffer | Susumu Higuchi, Yuuki Tamura | 1994-09-20 |
| 5300792 | Gap red light emitting diode | Susumu Arisaka, Yuki Tamura, Toshio Otaki | 1994-04-05 |
| 5234534 | Liquid-phase growth process of compound semiconductor | Akio Nakamura, Toshio Otaki, Susumu Higuchi | 1993-08-10 |