Issued Patents All Time
Showing 226–250 of 256 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7365018 | Fabrication of semiconductor device for flash memory with increased select gate width | Tuan Pham, Masayuki Ichige, Koji Hashimoto, Satoshi Tanaka, Kikuko Sugimae | 2008-04-29 |
| 7362615 | Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices | Tuan Pham, Hao Fang, Gerrit Jan Hemink | 2008-04-22 |
| 7295478 | Selective application of program inhibit schemes in non-volatile memory | Jun Wan, Jeffrey W. Lutze, Gerrit Jan Hemink, Ken Oowada, Jian Chen +1 more | 2007-11-13 |
| 7286408 | Boosting methods for NAND flash memory | — | 2007-10-23 |
| 7202125 | Low-voltage, multiple thin-gate oxide and low-resistance gate electrode | Tuan Pham | 2007-04-10 |
| 7183153 | Method of manufacturing self aligned non-volatile memory cells | Jeffrey W. Lutze, Tuan Pham | 2007-02-27 |
| 7045849 | Use of voids between elements in semiconductor structures for isolation | Jian Chen | 2006-05-16 |
| 6975537 | Source side self boosting technique for non-volatile memory | Jeffrey W. Lutze, Jian Chen, Yan Li | 2005-12-13 |
| 6859397 | Source side self boosting technique for non-volatile memory | Jeffrey W. Lutze, Jian Chen, Yan Li | 2005-02-22 |
| 6750103 | NROM cell with N-less channel | Mark Randolph | 2004-06-15 |
| 6602776 | Method and system for providing a polysilicon stringer monitor | Hao Fang | 2003-08-05 |
| 6583479 | Sidewall NROM and method of manufacture thereof for non-volatile memory cells | Richard Fastow, Shane Hollmer, Pau-Ling Chen, Michael A. Van Buskirk | 2003-06-24 |
| 6579769 | Semiconductor device manufacturing method including forming FOX with dual oxidation | Hiroyuki Shimada, Hideo Kurihara, Hideki Komori, Satoshi Takahashi | 2003-06-17 |
| 6492229 | Semiconductor device having reduced field oxide recess and method of fabrication | Toru Ishigaki, Hao Fang | 2002-12-10 |
| 6448609 | Method and system for providing a polysilicon stringer monitor | Hao Fang | 2002-09-10 |
| 6448593 | Type-1 polysilicon electrostatic discharge transistors | Hao Fang | 2002-09-10 |
| 6429479 | Nand flash memory with specified gate oxide thickness | K. Michael Han, Hao Fang | 2002-08-06 |
| 6365945 | Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch | Michael K. Templeton, John Jianshi Wang | 2002-04-02 |
| 6346737 | Shallow trench isolation process particularly suited for high voltage circuits | Hao Fang | 2002-02-12 |
| 6329687 | Two bit flash cell with two floating gate regions | Daniel Sobek, Timothy Thurgate, Carl Robert Huster | 2001-12-11 |
| 6312991 | Elimination of poly cap easy poly 1 contact for NAND product | John Jianshi Wang, Hao Fang | 2001-11-06 |
| 6187640 | Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxide | Hiroyuki Shimada, Hideo Kurihara, Hideki Komori, Satoshi Takahashi | 2001-02-13 |
| 6159795 | Low voltage junction and high voltage junction optimization for flash memory | Hao Fang, Narbeh Derhacobian | 2000-12-12 |
| 6143608 | Barrier layer decreases nitrogen contamination of peripheral gate regions during tunnel oxide nitridation | Yue-Song He, Hao Fang, Narbeh Derhacobian, Bill Douglas Cox, Kent Kuohua Chang +2 more | 2000-11-07 |
| 6057193 | Elimination of poly cap for easy poly1 contact for NAND product | John Jianshi Wang, Hao Fang | 2000-05-02 |