Issued Patents All Time
Showing 126–150 of 187 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9570160 | Non-volatile storage system with defect detetction and early programming termination | Grishma Shah, Sarath Puthenthermadam | 2017-02-14 |
| 9570179 | Non-volatile memory with two phased programming | Huai-Yuan Tseng | 2017-02-14 |
| 9552171 | Read scrub with adaptive counter management | Yichao Huang, Chris Avila, Dana Lee, Henry Chin, Sarath Puthenthermadam +1 more | 2017-01-24 |
| 9548130 | Non-volatile memory with prior state sensing | Huai-Yuan Tseng, Dana Lee, Ken Oowada, Shih-Chung Lee | 2017-01-17 |
| 9543023 | Partial block erase for block programming in non-volatile memory | Chun-Hung Lai, Cheng-Kuan Yin, Shih-Chung Lee, Ken Oowada | 2017-01-10 |
| 9449700 | Boundary word line search and open block read methods with reduced read disturb | Grishma Shah | 2016-09-20 |
| 9443597 | Controlling dummy word line bias during erase in non-volatile memory | Mohan Dunga, Masaaki Higashitani | 2016-09-13 |
| 9443606 | Word line dependent two strobe sensing mode for nonvolatile storage elements | Xiaochang Miao, Gerrit Jan Hemink | 2016-09-13 |
| 9437321 | Error detection method | Huai-Yuan Tseng | 2016-09-06 |
| 9418751 | Pre-program detection of threshold voltages of select gate transistors in a memory device | Shota Murai, Hideto Tomiie, Masaaki Higashitani | 2016-08-16 |
| 9396808 | Method and apparatus for program and erase of select gate transistors | Yan Li, Masaaki Higashitani, Mohan Dunga | 2016-07-19 |
| 9361986 | High endurance non-volatile storage | Jian Chen, Sergei Gorobets, Steven T. Sprouse, Tien-Chien Kuo, Yan Li +3 more | 2016-06-07 |
| 9343160 | Erase verify in non-volatile memory | Shih-Chung Lee | 2016-05-17 |
| 9343164 | Compensating source side resistance versus word line | Huai-Yuan Tseng, Dana Lee, Shih-Chung Lee, Arash Hazeghi | 2016-05-17 |
| RE45871 | Selected word line dependent select gate voltage during program | Chun-Hung Lai, Shinji Sato, Gerrit Jan Hemink | 2016-01-26 |
| 9229644 | Targeted copy of data relocation | Yew Yin Ng, Mrinal Kochar, Niles Yang | 2016-01-05 |
| 9214240 | Dynamic erase depth for improved endurance of non-volatile memory | Chun-Hung Lai, Shih-Chung Lee, Ken Oowada, Masaaki Higashitani | 2015-12-15 |
| RE45700 | Program temperature dependent read | — | 2015-09-29 |
| 9087601 | Select gate bias during program of non-volatile storage | Shinji Sato, Fumiko Yano, Chun-Hung Lai, Masaaki Higashitani | 2015-07-21 |
| 9053810 | Defect or program disturb detection with full data recovery capability | Dana Lee, Yan Li, Grishma Shah, Farookh Moogat, Masaaki Higashitani | 2015-06-09 |
| RE45520 | Data state-dependent channel boosting to reduce channel-to-floating gate coupling in memory | Jeffrey W. Lutze, Grishma Shah | 2015-05-19 |
| 9036417 | On chip dynamic read level scan and error detection for nonvolatile storage | Wenzhou Chen, Zhenming Zhou, Jun Wan, Yi-Chieh Chen, Dana Lee | 2015-05-19 |
| RE45497 | Programming memory with reduced pass voltage disturb and floating gate-to-control gate leakage | Henry Chin | 2015-04-28 |
| 9013928 | Dynamic bit line bias for programming non-volatile memory | Ken Oowada, Masaaki Higashitani, Man Lung Mui | 2015-04-21 |
| 8982629 | Method and apparatus for program and erase of select gate transistors | Yan Li, Masaaki Higashitani, Mohan Dunga | 2015-03-17 |